August 21, 2019
We provide an introduction to a very specific toy model of memristive networks, for which an exact differential equation for the internal memory which contains the Kirchhoff laws is known. In particular, we highlight how the circuit topology enters the dynamics via an analysis of directed graph. We try to highlight in particular the connection between the asymptotic states of memristors and the Ising model, and the relation to the dynamics and statics of disordered systems.
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February 25, 2024
Networks with memristive devices are a potential basis for the next generation of computing devices. They are also an important model system for basic science, from modeling nanoscale conductivity to providing insight into the information-processing of neurons. The resistance in a memristive device depends on the history of the applied bias and thus displays a type of memory. The interplay of this memory with the dynamic properties of the network can give rise to new behavior...
August 30, 2016
Networks with memristive elements (resistors with memory) are being explored for a variety of applications ranging from unconventional computing to models of the brain. However, analytical results that highlight the role of the graph connectivity on the memory dynamics are still a few, thus limiting our understanding of these important dynamical systems. In this paper, we derive an exact matrix equation of motion that takes into account all the network constraints of a purely...
October 9, 2022
The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically-driven circuits of stochastic binary resistors with memory. A key feature of our realization is the simultaneous co-existence of ferromagnetic and antiferromagnetic interactions between two neighboring spins -- an extraordinary property not available in nature. We demonstrate that the statistics of circuit states may perfectly...
November 15, 2017
The interest in memristors has risen due to their possible application both as memory units and as computational devices in combination with CMOS. This is in part due to their nonlinear dynamics, and a strong dependence on the circuit topology. We provide evidence that also purely memristive circuits can be employed for computational purposes. In the present paper we show that a polynomial Lyapunov function in the memory parameters exists for the case of DC controlled memrist...
We construct an exactly solvable circuit of interacting memristors and study its dynamics and fixed points. This simple circuit model interpolates between decoupled circuits of isolated memristors, and memristors in series, for which exact fixed points can be obtained. We introduce a Lyapunov functional that is found to be minimized along the non-equilibrium dynamics and which resembles a long-range Ising Hamiltonian with non-linear self-interactions. We use the Lyapunov func...
November 23, 2015
In this paper we investigate the application of non-local graph entropy to evolving and dynamical graphs. The measure is based upon the notion of Markov diffusion on a graph, and relies on the entropy applied to trajectories originating at a specific node. In particular, we study the model of reinforcement-decay graph dynamics, which leads to scale free graphs. We find that the node entropy characterizes the structure of the network in the two parameter phase-space describing...
December 8, 2018
We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an internal parameter. We provide an brief historical introduction, as well as an overview over the physical mechanism that lead to memristive behavior. This review is meant to guide nonpractitioners in the field of memristive circuits and their...
September 18, 2014
It is noticed that the inductive and capacitive features of the memristor reflect (and are a quintessence of) such features of any resistor. The very presence in the resistive characteristic v = f(i) of the voltage and current state variables, associated by their electrodynamics sense with electrical and magnetic fields, forces any resister to cause to accumulate some magnetic and electrostatic fields and energies around itself. The present version is strongly extended in the...
We discuss the properties of the dynamics of purely memristive circuits using a recently derived consistent equation for the internal memory variables of the involved memristors. In particular, we show that the number of independent memory states in a memristive circuit is constrained by the circuit conservation laws, and that the dynamics preserves these symmetries by means of a projection on the physical subspace. Moreover, we discuss other symmetries of the dynamics under ...
January 21, 2016
The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of two-dimensional disordered memristive networks subject to a slowly ramped voltage and show that they undergo a first-order phase transition in the conductivity for sufficiently high values of memory, as quantified by the memristive ON/OFF r...