Phases of memristive circuits via an interacting disorder approach

The interest in memristors has risen due to their possible application both as memory units and as computational devices in combination with CMOS. This is in part due to their nonlinear dynamics, and a strong dependence on the circuit topology. We provide evidence that also purely memristive circuits can be employed for computational purposes. In the present paper we show that a polynomial Lyapunov function in the memory parameters exists for the case of DC controlled memrist...

We provide an introduction to a very specific toy model of memristive networks, for which an exact differential equation for the internal memory which contains the Kirchhoff laws is known. In particular, we highlight how the circuit topology enters the dynamics via an analysis of directed graph. We try to highlight in particular the connection between the asymptotic states of memristors and the Ising model, and the relation to the dynamics and statics of disordered systems.

We construct an exactly solvable circuit of interacting memristors and study its dynamics and fixed points. This simple circuit model interpolates between decoupled circuits of isolated memristors, and memristors in series, for which exact fixed points can be obtained. We introduce a Lyapunov functional that is found to be minimized along the non-equilibrium dynamics and which resembles a long-range Ising Hamiltonian with non-linear self-interactions. We use the Lyapunov func...

Networks with memristive devices are a potential basis for the next generation of computing devices. They are also an important model system for basic science, from modeling nanoscale conductivity to providing insight into the information-processing of neurons. The resistance in a memristive device depends on the history of the applied bias and thus displays a type of memory. The interplay of this memory with the dynamic properties of the network can give rise to new behavior...

The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically-driven circuits of stochastic binary resistors with memory. A key feature of our realization is the simultaneous co-existence of ferromagnetic and antiferromagnetic interactions between two neighboring spins -- an extraordinary property not available in nature. We demonstrate that the statistics of circuit states may perfectly...

A memristor is a two-terminal nanodevice that its properties attract a wide community of researchers from various domains such as physics, chemistry, electronics, computer and neuroscience.The simple structure for manufacturing, small scalability, nonvolatility and potential of using inlow power platforms are outstanding characteristics of this emerging nanodevice. In this report,we review a brief literature of memristor from mathematic model to the physical realization. Wedi...

We introduce a Lyapunov function for the dynamics of memristive circuits, and compare the effectiveness of memristors in minimizing the function to widely used optimization software. We study in particular three classes of problems which can be directly embedded in a circuit topology, and show that memristors effectively attempt at (quickly) extremizing these functionals.

The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of two-dimensional disordered memristive networks subject to a slowly ramped voltage and show that they undergo a first-order phase transition in the conductivity for sufficiently high values of memory, as quantified by the memristive ON/OFF r...

A memristor, a two-terminal nanodevice, has garnered substantial attention in recent years due to its distinctive properties and versatile applications. These nanoscale components, characterized by their simplicity of manufacture, scalability in small dimensions, nonvolatile memory capabilities, and adaptability to low-power platforms, offer a wealth of opportunities for technological innovation. Memristors hold great promise in diverse fields, ranging from advanced memory de...

Until now, most memristor-based chaotic circuits proposed in the literature are based on mathematical models which assume ideal characteristics such as piece-wise linear or cubic non-linearities. The idea, illustrated here and originating from the experimental approach for device characterization, is to realize a chaotic system exploiting the non-linearity of only one memristor with a very simple experimental set-up using feedback. In this way a simple circuit is obtained and...