Revival of the Kondo effect

We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a function of a small perpendicular magnetic field |B| \lesssim 50mT. We discuss possible explanations of this effect and interpret it by means of a fine tuning of the energy mismatch of the single dot levels of the two quantum dots. The obser...

An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are tunnel junctions -- single-barrier planar junctions or more complex ones. In this review we present and discuss recent theoretical results on electron and spin transport through ferromagnetic mesoscopic junctions including two or more barriers....

We discuss the development of Kondo physics from the resolution of the resistance minimum by J. Kondo to recent developments in physics. The Kondo effect has given a great impact to all areas of physics. This reminds us that physics is one unified science. Kondo's pioneering work has led major developments in physics. We show brief history of the Kondo effect and discuss the Kondo effect from several points of view that appeared to be important through conversations with Prof...

We present a general description of low temperature transport through a quantum dot with any number of electrons at filling factor $1<\nu <2$. We provide a general description of a novel Kondo effect which is turned on by application of an appropriate magnetic field. The spin-flip scattering of carriers by the quantum dot only involves two states of the scatterer which may have a large spin. This process is described by spin-flip Hubbard operators, which change the angular mo...

We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by changing the potential on a gate electrode, and for increasing transparencies the effects dominating the transport changes from Coulomb Blockade to Universal Conductance Fluctuations with Kondo physics appearing in the intermedia...

We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharply reduced. The observed behavior is compared to predictions for a two-stage Kondo...

We review our recent studies on the Kondo effect in the tunneling phenomena through quantum dot systems. Numerical methods to calculate reliable tunneling conductance are developed. In the first place, a case in which electrons of odd number occupy the dot is studied, and experimental results are analyzed based on the calculated result. Tunneling anomaly in the even-number-electron occupation case, which is recently observed in experiment and is ascribed to the Kondo effect i...

We present a careful and thorough microscopic derivation of the Kondo Hamiltonian for single-molecule magnets (SMMs) transistors. When the molecule is strongly coupled to metallic leads, we show that by applying a transverse magnetic field it is possible to topologically induce or quench the Kondo effect in the conductance of a SMM with either an integer or a half-integer spin S>1/2. This topological Kondo effect is due to the Berry phase interference between multiple quantum...

We study the Kondo effect generated by a single magnetic impurity embedded in an ultrasmall metallic grain, to be called a ``Kondo box''. We find that the Kondo resonance is strongly affected when the mean level spacing in the grain becomes larger than the Kondo temperature, in a way that depends on the parity of the number of electrons on the grain. We show that the single-electron tunneling conductance through such a grain features Kondo-induced Fano-type resonances of meas...

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This m...