Intrinsic noise of a micro-mechanical displacement detector based on the radio-frequency single-electron transistor

We consider charge-qubit monitoring (continuous-in-time weak measurement) by a single-electron transistor (SET) operating in the sequential-tunneling regime. We show that commonly used master equations for this regime are not of the Lindblad form that is necessary and sufficient for guaranteeing valid physical states. In this paper we derive a Lindblad-form master equation and a corresponding quantum trajectory model for continuous measurement of the charge qubit by a SET. Ou...

We demonstrate the effect of single-electron tunneling (SET) through a carbon nanotube quantum dot on its nanomechanical motion. We find that the frequency response and the dissipation of the nanoelectromechanical system (NEMS) to SET strongly depends on the electronic environment of the quantum dot, in particular on the total dot capacitance and the tunnel coupling to the metal contacts. Our findings suggest that one could achieve quality factors of 10$^{6}$ or higher by cho...

We analyze the response of a nanomechanical resonator to an external drive when it is also coupled to a single-electron transistor (SET). The interaction between the SET electrons and the mechanical resonator depends on the amplitude of the mechanical motion leading to a strongly non-linear response to the drive which is similar to that of a Duffing oscillator. We show that the average dynamics of the resonator is well-described by a simple effective model which incorporates ...

We have studied theoretically magnetic resonance force microscopy (MRFM) with a high frequency nanomechanical cantilever when the cantilever frequency matches the resonant frequency of a single electron spin. Our estimations show that in this scenario the relative frequency shift of the cantilever can be much greater than the record MRFM frequency shift achieved in experiments with a single spin detection. Experimental realization of our proposal could open the way for fast d...

We analyze the current and zero-frequency current noise properties of a superconducting single electron resonator (SSET) coupled to a resonator, focusing on the regime where the SSET is operated in the vicinity of the Josephson quasiparticle resonance. We consider a range of coupling strengths and resonator frequencies to reflect the fact that in practice the system can be tuned to quite a high degree with the resonator formed either by a nanomechanical oscillator or a superc...

Measurements of the temperature and bias dependence of Single Electron Transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher tempera...

Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations are observed that persist in the fully depleted regime where the SET dot is completely empty. A model, confirmed by simulations, indicates that these oscillations originate from charging of an unintended floating gate located in the heavil...

The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this work we consider the problem of solid-state charge qubit measurements with a single-electron-transistor (SET). We analyze two models: one corresponds to a strong response SET, and the other is a tunable one in response strength. We find th...

The displacement of micro-electro-mechanical-systems (MEMS) cantilevers is used to measure a broad variety of phenomena in devices ranging from force microscopes to biochemical sensors to thermal imaging systems. We demonstrate the first direct measurement of a MEMS cantilever displacement with a noise floor at 40% of the shot noise limit (SNL). By combining multi-spatial-mode quantum light sources with a simple differential measurement, we show that sub-SNL MEMS displacement...

We report an experimental observation of the backaction of a Single Electron Transistor (SET) measuring the Coulomb staircase of a single electron box. As current flows through the SET, the charge state of the SET island fluctuates. These fluctuations capacitively couple to the box and cause changes in the position, width, and asymmetry of the Coulomb staircase. A sequential tunnelling model accurately recreates these effects, confirming this mechanism of the backaction of an...