April 13, 2002
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April 23, 2008
The quanta of electrical conductance is derived for a one-dimensional electron gas both by making use of the quasi-classical motion of a quantum fluid and by using arguments related to the uncertainty principle. The result is extended to a nanowire of finite cross-section area and to electrons in magnetic field, and the quantization of the electrical conductance is shown. An additional application is made to the two-dimensional electron gas.
January 31, 2006
Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one-dimensional structures such as nanotubes and nanowires, side contact with the metal only leads to weak band re-alignement, in contrast to bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However, the conventional strategy of heavily doping the semiconductor to obtain ohmic contacts...
April 1, 2008
A shallow potential well in a near-perfect quantum wire will bind a single-electron and behave like a quantum dot, giving rise to spin-dependent resonances of propagating electrons due to Coulomb repulsion and Pauli blocking. It is shown how this may be used to generate full entanglement between static and flying spin-qubits near resonance in a two-electron system via singlet or triplet spin-filtering. In a quantum wire with many electrons, the same pairwise scattering may be...
September 23, 1998
The conducting and mechanical properties of a metallic nanowire formed at the junction between two macroscopic metallic electrodes are investigated. Both two- and three-dimensional wires with a W(ide)-N(arrow)-W(ide) geometry are modelled in the free-electron approximation with hard-wall boundary conditions. Tunneling and quantum-size effects are treated exactly using the scattering matrix formalism. Oscillations of order E_F/lambda_F in the tensile force are found when the w...
June 16, 2004
We introduce a continuum approach to studying the lifetimes of monovalent metal nanowires. By modelling the thermal fluctuations of cylindrical nanowires through the use of stochastic Ginzburg-Landau classical field theories, we construct a self-consistent approach to the fluctuation-induced `necking' of nanowires. Our theory provides quantitative estimates of the lifetimes for alkali metal nanowires in the conductance range 10 < G/G_0 < 100 (where G_0=2e^2/h is the conductan...
September 18, 2014
The effect of nonconservative current-induced forces on the ions in a defect-free metallic nanowire is investigated using both steady-state calculations and dynamical simulations. Non-conservative forces were found to have a major influence on the ion dynamics in these systems, but their role in increasing the kinetic energy of the ions decreases with increasing system length. The results illustrate the importance of nonconservative effects in short nanowires and the scaling ...
September 14, 2016
For semimetal nanowires with diameters smaller than a few tens of nanometers, a semimetal-to-semiconductor transition is observed as the emergence of an energy band gap resulting from quantum confinement. Quantum confinement in a semimetal results in either lifting of the degeneracy of the conduction and valence bands in a zero gap semimetal, or shifting of bands with a negative energy overlap to form conduction and valence bands. For semimetal nanowires with diameters below ...
November 17, 2006
We study theoretically the quantum size effects in a one-dimensional semimetal by a Boltzmann transport equation. We derive analytic expressions for the electrical conductivity, Hall coefficient, magnetoresistance, and the thermoelectric power in a nanowire. The transport coefficients of semimetal oscillate as the size of the sample shrinks. Below a certain size the semimetal evolves into a semiconductor. The semimetal-semiconductor transition is discussed quantitatively. The...
September 26, 2002
The surface dynamics and thermodynamics of metal nanowires are investigated in a continuum model. Competition between surface tension and electron-shell effects leads to a rich stability diagram, with fingers of stability extending to extremely high temperatures for certain magic conductance values. The linearized dynamics of the nanowire's surface are investigated, including both acoustic surface phonons and surface self-diffusion of atoms. On the stability boundary, the sur...
September 3, 2010
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a variable resistor, or a simple resistive element with $I-V$ characteristics that can switch between ohmic and non-ohmic. By manipulating the gate voltage, stochastic transitions between different conducting states of the nanowire can be induced...