March 1, 2003
Pulsed electron paramagnetic resonance measurements of donor electron spins in natural phosphorus-doped silicon (Si:P) and isotopically-purified 28Si:P show a strongly temperature-dependent longitudinal relaxation time, T1, due to an Orbach process with DeltaE = 126 K. The 2-pulse echo decay is exponential in 28Si:P, with the transverse relaxation (decoherence) time, T2, controlled by the Orbach process above ~12 K and by instantaneous diffusion at lower temperatures. Spin echo experiments with varying pulse turning angles show that the intrinsic T2 of an isolated spin in 28Si:P is ~60 ms at 7 K.
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September 22, 2010
Phosphorus donor spin coherence in isotopically pure 28 silicon is measured at very low temperatures using pulsed electron spin resonance. The isolated spin T2 varies unexpectedly with phosphorus concentration
October 19, 2005
Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. We here report on two-pulse electron spin echo experiments on phosphorus shallow donors in natural and 28Si-enriched silicon epilayers doped with 10^16 cm-3 P donors. The experiments address the spin-spin relaxation times and mechanisms and provide, through the elec...
April 12, 2021
We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped $^{28}$Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The $^{28}$Si:P spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a distinct transition to a T$^9$ dependence which dominates the spin relaxation between 2 and 4 K at low magnetic fields. Th...
February 22, 2010
A purpose built millikelvin pulsed x-band ESR system is used to measure spin decoherence times of phosphorus donor spins in 99.92% isotopically pure 28 silicon. The isolated P spin T2 is estimated at 260 (50) ms at 4.2 K and 330 (100) ms at 0.9 K.
February 5, 2004
We report a pulsed EPR study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29^Si and natural abundance Si single crystals measured at 8 K.
July 13, 2021
We characterize the phase memory time of phosphorus donor electron spins in lightly-doped natural silicon at high magnetic field (8.58 T) in the dark and under low-power optical excitation. The spin echo decays are dominated by spectral diffusion due to the presence of the 4.7% abundant spin-1/2 silicon-29 nuclei. At 4.2 K, the spectral diffusion time (T$_{SD}$) measured in the dark is $124 \pm 7$ $\mu$s, a factor of 2 smaller than that measured at low magnetic fields (0.35 T...
May 4, 2009
A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for [$^{31}$P] = 10$^{15}$ $\mathrm{cm}^{-3}$ and [$^{31}$P] = 10$^{16}$ $\mathrm{cm}^{-3}$ at about liquid $^4$He temperatures ($T = 5$ $\mathrm{K} - 15$ $\mathrm{K}$). Using pulsed electrically detected magnetic resonance (pEDMR), spin--dependent t...
March 26, 2020
Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long coherence times in any realistic experimental conditions. Here, we present pulsed electron spin resonance studies on the longitudinal $(T_1)$ and transverse $(T_2)$ relaxation times of phosphorus donors in bulk silicon with various electric field ...
September 11, 2014
Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopants in isotopically enriched 28Si since the reduced inhomogeneous linewidth in this material improves spectral resolution. With this in mind, we measured ESR on exchange coupled phosphorus dimers in 28Si and report two results. First, a new fine structure is observed in the ESR spectrum arising from...
December 16, 2005
Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear spins on the donor electron spin is systematically studied. The linewidth as a function of f shows a good agreement with theoretical analysis. We also report the phase memory time T_M of the donor electron spin dependent on both f and the crys...