Analysis of the radio-frequency single-electron transistor with large quality factor

A single-electron transistor (SET) can be used as an extremely sensitive charge detector. Mechanical displacements can be converted into charge, and hence, SETs can become sensitive detectors of mechanical oscillations. For studying small-energy oscillations, an important approach to realize the mechanical resonators is to use piezoelectric materials. Besides coupling to traditional electric circuitry, the strain-generated piezoelectric charge allows for measuring ultrasmall ...

The current through ferromagnetic single-electron transistors (SET's) is considered. Using path integrals the linear response conductance is formulated as a function of the tunnel conductance vs. quantum conductance and the temperature vs. Coulomb charging energy. The magneto-resistance of ferromagnet-normal metal-ferromagnet (F-N-F) SET's is almost independent of the Coulomb charging energy and is only reduced when the transport dwell time is longer than the spin-flip relaxa...

We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel junctions of traditional SETs. Our transistor with a total asymptotic resistance of 110 kOhm showed a very sharp Coulomb blockade and reproducible, deep and strictly e-periodic gate modulation in wide ranges of bias currents I and gate voltages V...

Ultra-sensitive short-wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS-compatible silicon technological platform has been challenging due to the low absorption coefficient for silicon in the SWIR range. In this study, a codoped silicon-based single-electron transistor (SET) in a silicon-on-insulator field-effect transistor (SOI-FET) configuration is fabricated, which successfully ...

Incorporating a variable capacitance diode into a radio-frequency matching circuit allows us to in-situ tune the resonance frequency of an RF quantum point contact, increasing the versatility of the latter as a fast charge sensor of a proximal quantum circuit. The performance of this method is compared in detail to conventional low-frequency charge detection. The approach is also applicable to other RF-detection schemes, such as RF-SET circuits.

We calculate the full frequency spectral density of voltage fluctuations in a Single Electron Transistor (SET), used as an electrometer biased above the Coulomb threshold so that the current through the SET is carried by sequential tunnel events. We consider both a normal state SET and a superconducting SET. The whole spectrum from low frequency telegraph noise to quantum noise at frequencies comparable to the SET charging energy $(E_{C}/\hbar)$, and high frequency Nyquist no...

We present a comprehensive study of thermoelectric transport properties of a quantum nanoelectromechanical system (NEMS) described by a single-electron-transistor (SET) coupled to a quantum nanomechanical resonator (NR). The effects of a quantum NR on the electronic current are investigated with special emphasis on how the SET-NR coupling strength plays a role in such a NEMS. We find that the SET-NR coupling is not only able to suppress or enhance the thermoelectric current b...

We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge induced on the SET central island from single electron additions to the dot modulates the SET output, and we describe two methods for demodulation that permit quantitative extraction of the quantum dot capacitance signal. The two methods p...

We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than $10^{-6}$e$/\sqrt{\mathrm{Hz}}$ is possible with a high $Q$-value $\sim 10^3$, or using a SQUID amplifier. The model is compared to experiment, where charge sensitivity $3 \times 10^{-5}$e$/\sqrt{\mathrm{Hz}}$ and ...

We investigate the noise properties of a superconducting single electron transistor (SSET) coupled to an harmonically driven resonator. Using a Langevin equation approach, we calculate the frequency spectrum of the SSET charge and calculate its effect on the resonator field. We find that the heights of the peaks in the frequency spectra depend sensitively on the amplitude of the resonator oscillation and hence suggest that the heights of these peaks could act as a sensitive s...