June 24, 2003
Similar papers 2
October 13, 2007
The electronic structure of a prototype dilute magnetic semiconductor (DMS), Ga1-xMnxAs, is studied by magnetic circular dichroism (MCD) spectroscopy. We prove that the optical transitions originated from impurity bands cause the strong positive MCD background. The MCD signal due to the E0 transition from the valence band to the conduction band is negative indicating that the p-d exchange interactions between the p-carriers and d-spin is antiferromagnetic. The negative E0 MCD...
October 17, 2006
We propose a theory which allow to calculate the magnetic excitation spectrum in diluted ferromagnetic systems. The approach is rather general and based on the Self-Consistent local Random Phase Approximation in which disorder (dilution) and thermal fluctuations are properly treated. To illustrate its reliability and accuracy we calculate the magnetic excitation in the diluted III-V magnetic semiconductor $Ga_{1-x}Mn_{x}As$. It is shown that dilution has a drastic effect on t...
May 12, 2014
A recently discovered magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_2$As$_{2}$, with its decoupled spin and charge doping, provides a unique opportunity to elucidate the microscopic origin of the magnetic interaction and ordering in dilute magnetic semiconductors (DMS). We show that (i) the conventional density functional theory accurately describes this material, and (ii) the magnetic interaction emerges from the competition of the short-range superexchange a...
March 14, 2006
The body of research on (III,Mn)V diluted magnetic semiconductors initiated during the 1990's has concentrated on three major fronts: i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, ii) the materials science of growth and defects and iii) the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. Fro...
December 13, 2013
The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indicating that the holes mediated ferromagnetism reside in the valence band or the impurity band. Full understanding of character of the Mn states in GaAs can bring the increase of (Ga,Mn)As Curie temperature. In this paper we verify the ellipsometric results and compare with more precise photoreflectan...
October 26, 2005
The magneto-optical properties of Ga$_{1-x}$Mn$_{x}$As including their most common defects were investigated with precise first--principles density-functional FLAPW calculations in order to: {\em i}) elucidate the origin of the features in the Kerr spectra in terms of the underlying electronic structure; {\em ii}) perform an accurate comparison with experiments; and {\em iii}) understand the role of the Mn concentration and occupied sites in shaping the spectra. In the substi...
October 27, 2010
We provide a quantitative theoretical model study of the dynamical magnetic properties of optimally annealed Ga$_{1-x}$Mn$_x$As. This model has already been shown to reproduce accurately the Curie temperatures for Ga$_{1-x}$Mn$_x$As. Here we show that the calculated spin stiffness are in excellent agreement with those which were obtained from ab-initio based studies. In addition, an overall good agreement is also found with available experimental data. We have also evaluated ...
November 29, 2012
Diluted magnetic semiconductors (DMS) like Ga$_{1-x}$Mn$_{x}$As are described by a realistic tight-binding model (TBM) for the (valence) bands of GaAs, by a Zener (J-)term modeling the coupling of the localized Mn-spins to the spins of the valence band electrons, and by an additional potential scattering (V-) term due to the Mn-impurities. We calculate the effective (Heisenberg) exchange interaction between two Mn-moments mediated by the valence electrons. The influence of th...
February 4, 2005
Measurements of coherent electron spin dynamics in Ga(1-x)Mn(x)As/Al(0.4)Ga(0.6)As quantum wells with 0.0006% < x < 0.03% show an antiferromagnetic (negative) exchange bewteen s-like conduction band electrons and electrons localized in the d-shell of the Mn2+ impurities. The magnitude of the s-d exchange parameter, N0 alpha, varies as a function of well width indicative of a large and negative contribution due to kinetic exchange. In the limit of no quantum confinement, N0 al...
July 9, 2009
We have performed a systematic magneto-optical Kerr spectroscopy study of GaMnAs with varying Mn densities as a function of temperature, magnetic field, and photon energy. Unlike previous studies, the magnetization easy axis was perpendicular to the sample surface, allowing us to take remanent polar Kerr spectra in the absence of an external magnetic field. The remanent Kerr angle strongly depended on the photon energy, exhibiting a large positive peak at $\sim1.7$ eV. This p...