ID: cond-mat/0308579

Room temperature domain wall pinning in bent ferromagnetic nanowires

August 27, 2003

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Controlled domain wall pinning in ferromagnetic nanowire by nanoparticles stray fields

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V. L. Mironov, O. L. Ermolaeva, E. V. Skorohodov
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We report the results of experimental investigations of controlled domain wall (DW) pinning in a ferromagnetic nanowire (NW) by stray fields of two uniformly magnetized bistable ferromagnetic nanoparticles (NPs) placed on either side of the NW and elongated parallel to the NW axis. We show by magnetic force microscopy measurements that DW pinning strength essentially depends on the orientation of the NP magnetic moments relative to the NW magnetization and can reach 20 mT. We...

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Resistivity noise in crystalline magnetic nanowires and its implications to domain formation and kinetics

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We have investigated the time-dependent fluctuations in electrical resistance, or noise, in high quality crystalline magnetic nanowires within nanoporous templates. The noise increases exponentially with increasing temperature and magnetic field, and has been analyzed in terms of domain wall depinning within the Neel-Brown framework. The frequency-dependence of noise also indicates a crossover from nondiffusive kinetics to long-range diffusion at higher temperatures, as well ...

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Magnetic domain walls : Types, processes and applications

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G. Venkat, D. A. Allwood, T. J. Hayward
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Domain walls (DWs) in magnetic nanowires are promising candidates for a variety of applications including Boolean/unconventional logic, memories, in-memory computing as well as magnetic sensors and biomagnetic implementations. They show rich physical behaviour and are controllable using a number of methods including magnetic fields, charge and spin currents and spin-orbit torques. In this review, we detail types of domain walls in ferromagnetic nanowires and describe processe...

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Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

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Hanan Mohammed, Hector Corte-León, Yurii P. Ivanov, Sergei Lopatin, Julian A. Moreno, Andrey Chuvilin, Akshaykumar Salimath, Aurelien Manchon, ... , Kosel Jurgen
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A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force ...

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Micromagnetic analysis of magnetic noise in ferromagnetic nanowires

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Jungbum Yoon, Chun-Yeol You, Younghun Jo, ... , Jung Myung-Hwa
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We investigate the magnetic thermal noise in magnetic nanowires with and without a domain wall by employing micromagnetic simulations. The magnetic thermal noise due to random thermal fluctuation fields gives important physical quantities related with the magnetic susceptibility. We find that the resonance frequency of a domain wall is distinguishable from one of a magnetic domain itself. For the single domain without a domain wall, the resonance frequency is well described b...

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Domain wall pinning in a circular cross-section wire with modulated diameter

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Riz A. De, B. Trapp, J. A. Fernandez-Roldan, Ch. Thirion, J. -Ch. Toussaint, ... , Gusakova D.
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Domain wall propagation in cylindrical nanowires with modulations of diameter is a key phenomenon to design physics-oriented devices, or a disruptive three-dimensional magnetic memory. This chapter presents a combination of analytical modelling and micromagnetic simulations, with the aim to present a comprehensive panorama of the physics of pinning of domain walls at modulations, when moved under the stimulus of a magnetic field or a spin-polarized current. For the sake of co...

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Interplay between domain walls and magnetization curling induced by chemical modulations in cylindrical nanowires

May 1, 2024

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L. Alvaro-Gómez, A. Masseboeuf, N. Mille, C. Fernández-Gonz ález, S. Ruiz-Gómez, J. C Toussaint, R. Belkhou, M. Foerster, E. Pereiro, L. Aballe, C. Thirion, D. Gusakova, ... , Pérez L.
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Cylindrical magnetic nanowires have been proposed as a means of storing and processing information in a 3D medium, based on the motion of domain walls~(DWs). Introducing short chemical modulations in such wires would allow for reliable digital control of DWs. Here, we outline the intricate physics of the interaction of domain walls with modulations to control their motion, combining micromagnetic simulations and experimental evidence. This interaction combines a long-range mo...

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Bloch-point-mediated topological transformations of magnetic domain walls in cylindrical nanowires

June 28, 2018

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Olivier SPINTEC - UMR 8191 Fruchart, A FAU Wartelle, B FAU Trapp, M FAU Staňo, Christophe FAU Thirion, S FAU Bochmann, J FAU Bachmann, M Foerster, L Aballe, O. Menteş, A Locatelli, A Sala, ... , Toussaint J. -C
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Cylindrical nanowires made of soft magnetic materials, in contrast to thin strips, may host domain walls of two distinct topologies. Unexpectedly, we evidence experimentally the dynamic transformation of topology upon wall motion above a field threshold. Micromagnetic simulations highlight the underlying precessional dynamics for one way of the transformation, involving the nucleation of a Bloch-point singularity, however, fail to reproduce the reverse process. This rare disc...

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Application of the point-like contact model: Resistance Oscillations of the Domain Wall in Magnetic Nanowires and Junctions due to Mean Free Path Effects

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Artur Useinov
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This work is focused on determining the electrical resistance, which induced by single domain wall in magnetic nanowire with a negligible defect. The provided model covers a wide range of nanowire's diameters. The obtained result demonstrates a few orders rapid reduction of the domain wall resistance accompanied by its possible deviations versus the diameter growth ranging from 1.2 nm to 15.2 nm. The origin of these deviations, which are also identified as oscillations, is re...

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Electrically controlled pinning of Dzyaloshinskii-Moriya domain walls

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Koji Sato, Oleg A. Tretiakov
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We propose a method to all-electrically control a domain-wall position in a ferromagnetic nanowire with Dzyaloshinskii-Moriya interaction. The strength of this interaction can be controlled by an external electric field, which in turn allows a fine tuning of the pinning potential of a spin-spiral domain wall. It allows to create more mobile pinning sites and can also be advantageous for ultra-low power electronics.

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