Room temperature domain wall pinning in bent ferromagnetic nanowires

The one-dimensional problem of a static head-to-head domain wall structure in a thin soft-magnetic nanowire with circular cross-section is treated within the framework of micromagnetic theory. A radius-dependent analytic form of the domain wall profile is derived by decomposing the magnetostatic energy into a monopolar and a dipolar term. We present a model in which the dipolar term of the magnetostatic energy resulting from the transverse magnetization in the center of the d...

Understanding the domain wall (DW) dynamics in magnetic nanowires (NW) is crucial for spintronic-based applications demanding the use of DWs as information carriers. This work focuses on the dynamics of a DW displacing along a bent NW with an elliptical shape under the action of spin-polarized electric currents and external magnetic fields. Our results evidence that a curvature gradient induces an exchange-driven effective tangential field responsible for pinning a DW near th...

In a first approximation, known as the adiabatic process, the direction of the spin polarization of currents is parallel to the local magnetization vector in a domain wall. Thus the spatial variation of the direction of the spin current inside the domain wall results in an adiabatical spin transfer torque on the magnetization. We show that domain wall motion driven by this spin torque has many unique features that do not exist in the conventional wall motion driven by a magne...

Dynamic micromagnetic simulation studies have been completed to observe the motion of a domain wall in a magnetic nanowire in an effort to increase the field-driven domain wall speed. Previous studies have shown that the wire dimensions place a cap on the maximum speed attainable by a domain wall when driven by a magnetic field placed along the direction of the nanowire. Here we present data showing a significant increase in the maximum speed of a domain wall due to the addit...

Rectangular nanowires may have domain walls nucleated and moved through them to realize many devices. It has been shown that at a particular width and thickness of a nanowire with perpendicular anisotropy, there is a switch from the domain wall being of Bloch-type to it being of N\'eel-type. This critical shape can be found through micromagnetics simulations, but here we present an analytic calculation for the energies of both wall types involving two iterations for the demag...

We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co/Ni spin valves at ambient temperatures is typically marked by a single sharp step change in resistance, low temperature measurements can reveal a series of resistance steps, consistent with non-uniform magnetization configurations. We propose a model that consists of domain nucleation, propagation ...

The precise manipulation of transverse magnetic domain walls in finite/infinite nanowires with artificial defects under the influence of very short spin-polarized current pulses is investigated. We show that for a classical $3d$ ferromagnet material like Nickel, the exact positioning of the domain walls at room temperature is possible only for pulses with very short rise and fall time that move the domain wall reliably to nearest neighboring pinning position. The influence of...

Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of their fundamental interest. The study of domain wall has been linked to the research on novel spin-orbit coupling phenomena such as the Dzyaloshinskii-Moriya interaction and the spin Hall effect amount others. Domain walls can be nucleated...

Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store, transp...

We have investigated dynamic behaviors of the magnetic domain wall under perpendicular magnetic field pulses in ferromagnetic nanowires using micromagnetic simulations. It has been found that the perpendicular magnetic field pulse can trigger the magnetic domain wall motion, where all the field torques are kept to be on the plane of nanowire strip. The magnetic domain wall speed faster than several hundreds meters per second is predicted without the Walker breakdown for the p...