October 27, 2003
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF) contacts for the source and drain. When the magnetization configuration between the HMF source and drain is parallel (antiparallel), highly spin-polarized carriers injected from the HMF source to the channel are transported into (blocked by) the HMF drain, resulting in the magnetization-configuration-dependent output characteristics. Our two-dimensional numerical analysis indicates that the spin MOSFET exhibits high (low) current drive capability in the parallel (antiparallel) magnetization, and that extremely large magnetocurrent ratios can be obtained. Furthermore, the spin MOSFET satisfies other important requirements for "spintronic" integrated circuits, such as high amplification capability, low power-delay product, and low off-current.
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July 10, 2008
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict that this device should display a very high magnetoresistance (MR) ratio (between the cases of parallel and anti-parallel magnetizations) for the case of half-metal ferromagnets (HMF). We use the non-equilibrium Green's function (NEGF) forma...
September 10, 2004
We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization configuration of the ferromagnetic contacts for the source and drain, that is, high current-drive capability in the parallel magnetization and low current-drive capability in the antiparallel magnetization [S. Sugahara and M. Tanaka: Appl. Phys....
October 10, 2003
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The spin-dependent interplay between the drift current (due to a source-drain bias) and the diffusion current (due to carrier leakage into the ferromagnetic gate) results in a rich variety of spin dependence in the current that flows through such a ...
November 9, 2007
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF conductance remains fairly large (~ 60) up to a temperature of 10 K. This device a...
October 26, 2015
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current IDS by ~+ or -0.5 % with a gate-source voltage of + or -10.8 V and also modulate IDS by up to 60 % with changing the magnetization configuration of the GaMnAs so...
June 21, 2016
We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of the spin sub-bands and feature complete spin polarization at finite temperature. We present an analytical model of the device and comment the properties relevant for devices applications. Our results boost SGS as a new paradigm for the spin...
January 30, 2010
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed spin-valve-type hysteretic behavior, when the measurements were performed with constant source-drain and source-gate biases...
March 5, 2020
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The magnetoresistance ratio of the spin MOSFET with a channel length of 0.4$\mu$m was increased by a factor of 6 from that in our previous paper [Phys. Rev. B 99, 165301 (2019)] by lowering the parasitic resistances at ...
October 28, 2009
Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for semiconductor channel is established. However, this is not so easy challenge owing to ferromagnet/semiconductor-interface-related several problems. In this paper, we demonstrate pseudo-spin-MOSFET (PS-MOSFET) architecture that is a new circui...
October 22, 2015
We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way to practical use of the Si spin MOSFET.