A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that electrons have to overcome and thus they have a threshold voltage $V_T$, which must be supplied to the diode to turn it on. This threshold voltage gives rise to power dissipation in the form of heat and hence is an undesirable feature. In this w...

Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect transistors (FETs) using SGSs and/or spin-gapped metals (SGMs) as source and drain electrodes. These devices operate similarly to metal-semiconductor Schottky barrier FETs, where a potential barrier forms between the SGS (or SGM) electrode and the ...

We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two dimensional electron gas (2DEG) formed in an AlSb/InAs quantum well. Data from this device suggest that its resistance is control...

Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical top-of-the-barrier FET model, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts. Such a device could retain the spin polarization of injected e...

We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary semiconductor. This provides the possibility of realizing a spin field-effect-transistor in Si, using electrostatic transit-time control in a perpendicular magnetic field, rather than Rashba effect with spin-orbit interaction.

A Datta-Das spin field-effect transistor is built of a heterostructure with a Rashba spin-orbit interaction (SOI) at the interface (or quantum well) separating two possibly magnetized reservoirs. The particle and spin currents between the two reservoirs are driven by chemical potentials that are (possibly) different for each spin direction. These currents are also tuned by varying the strength of the SOI, which changes the amount of the rotation of the spins of electrons cros...

Scalability of Field Programmable Gate Array (FPGA) using spin MOSFET (spin FPGA) with magnetocurrent (MC) ratio in the range of 100% to 1000% is discussed for the first time. Area and speed of million-gate spin FPGA are numerically benchmarked with CMOS FPGA for 22nm, 32nm and 45nm technologies including 20% transistor size variation. We show that area is reduced and speed is increased in spin FPGA owing to the nonvolatile memory function of spin MOSFET.

A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin.

We propose a modified spin-field-effect transistor fabricated in a two dimensional electron gas (2DEG) formed at the surface of multiferroic oxides with a transverse helical magnetic order. The topology of the oxide local magnetic moments induces a resonant momentum-dependent effective spin-orbit interaction acting on 2DEG. We show that spin polarization dephasing is strongly suppressed which is crucial for functionality. The carrier spin precession phase depend linearly on t...

The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET (PS-MOSFET). PS-MOSFET is a new circuit approach to reproduce the functions of spin-transistors, based on recently progressed magnetoresistive random access memory (MRAM) technology. The proposed NV-SRAM cell can be simply configured by connec...