Deformation Electron-Phonon Coupling in Disordered Semiconductors and Nanostructures

The spectral Matthiessen's rule is commonly used to calculate the total phonon scattering rate when multiple scattering mechanisms exist. Here we predict the spectral phonon relaxation time $\tau$ of defective bulk silicon using normal mode analysis based on molecular dynamics, and show that the spectral Matthiessen's rule is not accurate due to the neglect of the coupling between anharmonic phonon-phonon scattering $\tau_a^{-1}$ and phonon-impurity scattering $\tau_i^{-1}$. ...

We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on heavily doped n-type Si samples with electron concentration in the range $3.5-16.0\times 10^{25}$ m$^{-3}$ are performed at sub-1 K temperatures. We find a g...

The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles. Surface termination and chemistry is found to have a relatively small influence, whereas reduced dimensionality fundamentally alters the behavior of deformation potentials. As a consequence, electron coupling to "breathing modes" emerges that cannot be described by conventional treatments of e-ph coupling. The consequences for phys...

We present a first-principles framework to extract deformation potentials in Silicon based on density-functional theory (DFT) and density-functional perturbation theory (DFPT). We compute the electronic band structures, phonon dispersion relations, and electron-phonon matrix elements to extract deformation potentials for acoustic and optical phonons for all possible processes. The matrix elements clearly show the separation between intra- and inter-valley scattering in the co...

We study a nonuniversal contribution to the dephasing rate of conduction electrons due to local vibrational modes. The inelastic scattering rate is strongly influenced by multiphonon excitations, exhibiting oscillatory behaviour. For higher frequencies, it saturates to a finite, coupling dependent value. In the strong coupling limit, the phonon is almost completely softened, and the inelastic cross section reaches its maximal value. This represents a magnetic field insensitiv...

In this study a method for calculation of the electron-phonon scattering rate in semiconductor structures with one-dimensional electron gas is developed. The energy uncertainty of electrons is taken into account.

We discuss the rich vibrational dynamics of nanometer-scale semiconducting and insulating crystals as probed by localized electronic impurity states, with an emphasis on nanoparticles that are only weakly coupled to their environment. Two principal regimes of electron-phonon dynamics are distinguished, and a brief survey of vibrational-mode broadening mechanisms is presented. Recent work on the effects of mechanical interaction with the environment is discussed.

From density functional calculations, we show that localized states stemming from defects or topological disorder exhibit an anomalously large electron-phonon coupling. We provide a simple analysis to explain the observation and perform a detailed study on an interesting system: amorphous silicon. We compute first principles deformation potentials (by computing the sensitivity of specific electronic eigenstates to individual classical normal modes of vibration). We also probe...

The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3--90 K. We found that the small-energy-transfer electron-electron ($e$-$e$) scattering process dominated the dephasing from a few K to several tens K. At higher temperatures, a crossover to the large-energy-transfer $e$-$e$ scattering process was observed. Below about 1--2 K, the dephasing time $\tau_\varphi$ revea...

A thorough understanding of the microscopic picture of heat conduction in solids is critical to a broad range of applications, from thermal management of microelectronics to more efficient thermoelectric materials. The transport properties of phonons, the major microscopic heat carriers in semiconductors and insulators, particularly their scattering mechanisms, have been a central theme in microscale heat conduction research. In the past two decades, significant advancements ...