Schottky-barrier induced spin dephasing in spin injection

To understand the coupling factor between Rashba spin-orbital interaction and ferromagnetic proximity effect, we design a Monte Carlo algorithm to simulate the spin and charge distributions for the room-temperature Rashba material, Graphene/Nickel(111) substrate, at finite temperature. We observe that the rate of exchange fluctuation is a key player to produce giant Rashba spin-orbit splitting in graphene. More importantly, we monitor the Rashba spin-splitting phenomenon wher...

We theoretically consider a junction composed of a ferromagnetic insulator (FI) and a two-dimensional electron gas (2DEG) with Rashba- and Dresselhaus-type spin-orbit interactions. Using the Boltzmann equation, we calculate an electric current in 2DEG induced by the inverse Edelstein when imposing the temperature difference between FI and 2DEG. We clarify how the induced current depends on the magnetization direction of FI, spin texture on the Fermi surface of 2DEG, and tempe...

Employing unbiased large-scale time-dependent density-matrix renormalization-group simulations, we demonstrate the generation of a charge-current vortex via spin injection in the Rashba system. The spin current is polarized perpendicular to the system plane and injected from an attached antiferromagnetic spin chain. We discuss the conversion between spin and orbital angular momentum in the current vortex that occurs because of the conservation of the total angular momentum an...

The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin packets, which are injected across an Fe/GaAs Schottky barrier into $n$-GaAs. B...

The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductance mismatch is found to enhance the current induced spin-imbalance in the semiconductor. The GaAs|MnAs interface resistance is obtained from an analysis of the magnetic field dependent Kerr rotation experiments by Stephens et al. and compared with first-principles calculations for intrinsic interfaces. With increasing current bi...

We use the Hirsch-Fye quantum Monte Carlo method to study the single magnetic impurity problem in a two-dimensional electron gas with Rashba spin-orbit coupling. We calculate the spin susceptibility for various values of spin-orbit coupling, Hubbard interaction, and chemical potential. The Kondo temperatures for different parameters are estimated by fitting the universal curves of spin susceptibility. We find that the Kondo temperature is almost a linear function of Rashba sp...

Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with a Bloch equation model using a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings is developed and applied to a spin field effect transistor (spinFET) operating unde...

In this paper one can find a detailed description of the research performed by author during his stay at IMEC (Belgium). It deals with the experimental verification of the highly coherent electron spin transport across ferromagnetic metal / semiconductor interface at low and room temperatures.

Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type and 10% in p-type degenerate Si bands, using a narrow Schottky and a SiO2 tunnel barrier in a direct tunneling regime. Furthermore, by increasing the width of the Schottky barrier in non-degenerate p-type Si, we observed a systematic sign rev...

We study high-field spin transport of electrons in a quasi one-dimensional channel of a $GaAs$ gate controlled spin interferometer (SPINFET) using a semiclassical formalism (spin density matrix evolution coupled with Boltzmann transport equation). Spin dephasing (or depolarization) is predominantly caused by D'yakonov-Perel' relaxation associated with momentum dependent spin orbit coupling effects that arise due to bulk inversion asymmetry (Dresselhaus spin orbit coupling) an...