December 29, 2005
Similar papers 3
April 9, 1997
The anomalous conducting phase that has been shown to exist in zero field in dilute two-dimensional electron systems in silicon MOSFETs is driven into a strongly insulating state by a magnetic field of about 20 kOe applied parallel to the plane. The data suggest that in the limit of T -> 0 the conducting phase is suppressed by an arbitrarily weak magnetic field. We call attention to striking similarities to magnetic field-induced superconductor-insulator transitions.
January 2, 2006
A study of magnetic-field tuned superconductor-insulator transitions in amorphous $Nb_{0.15}Si_{0.85}$ thin films shows that quantum superconductor-insulator transitions are characterized by an unambiguous signature -- a kink in the temperature profile of the critical magnetic field. Using this criterion, we show that the nature of the magnetic-field tuned superconductor-insulator transition depends on the orientation of the field with respect to the film. For perpendicular m...
August 29, 2001
Dramatic glass-like behavior involving nonexponential relaxation of in-plane electrical conduction, has been induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. The effect is found over a narrow range of film thicknesses well on the insulating side of the thickness-tuned superconductor-insulator transition. The simplest explanation of this field-induced glass-like behavior is a Pauli principle blocking of hopping transport...
December 7, 2007
We have observed multiple magnetic field driven superconductor to insulator transitions (SIT) in amorphous Bi films perforated with a nano-honeycomb (NHC) array of holes. The period of the magneto-resistance, H=H_M=h/2eS where S is the area of a unit cell of holes, indicates the field driven transitions are boson dominated. The field-dependent resistance follows R(T)=R_0(H)exp(T_0(H)/T) on both sides of the transition so that the evolution between these states is controlled b...
October 13, 2008
We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the "dirty boson model", we have found a critical exponents product of $\nu_d z$ > 0.4. The corresponding phase diagram in the (H,d) plane is inferred. This small exponent product as well as the non-universal value of the critical resistance found at the transition call for further investi...
October 6, 2000
As the normal state sheet resistance, $R_n$, of a thin film superconductor increases, its superconducting properties degrade. For $R_n\simeq h/4e^2$ superconductivity disappears and a transition to a nonsuperconducting state occurs. We present electron tunneling and transport measurements on ultrathin, homogeneously disordered superconducting films in the vicinity of this transition. The data provide strong evidence that fluctuations in the amplitude of the superconducting or...
April 7, 2011
The electrical transport properties of ultrathin YBCO films have been modified using an electric double layer transistor configuration employing an ionic liquid. The films were grown on SrTiO3 substrates using high pressure oxygen sputtering. A clear evolution from superconductor to insulator was observed in nominally 7 unit cell thick films. Using a finite size scaling analysis, curves of resistance versus temperature, R(T), over the temperature range from 6K to 22K were fou...
December 12, 2011
BaPb$_{1-x}$Bi$_x$O$_3$ is found to exhibit a field-tuned superconductor to insulator transition for Bi compositions 0.24 $\leq x \leq$ 0.29. The magnetoresistance of optimally doped samples manifests a temperature-independent crossing point and scaling of the form $\rho(T,H)=\rho_c F(|H-H_{c}|T^{-1/z\nu})$, where $H_c$ is the field determined by the temperature-independent crossing point, and $z\nu$ = 0.69 $\pm$ 0.03. High resolution transmission electron microscopy measurem...
March 18, 2004
We present the results of an experimental study of the current-voltage characteristics in strong magnetic field ($B$) of disordered, superconducting, thin-films of amorphous Indium-Oxide. As the $B$ strength is increased superconductivity degrades, until a critical field ($B_c$) where the system is forced into an insulating state. We show that the differential conductance measured in the insulating phase vanishes abruptly below a well-defined temperature, resulting in a clear...
August 15, 2003
Bismuth-metal graphite (MG) has a unique layered structure where Bi nanoparticles are encapsulated between adjacent sheets of nanographites. The superconductivity below $T_{c}$ (= 2.48 K) is due to Bi nanoparticles. The Curie-like susceptibility below 30 K is due to conduction electrons localized near zigzag edges of nanographites. A magnetic-field induced transition from metallic to semiconductor-like phase is observed in the in-plane resistivity $\rho_{a}$ around $H_{c}$ ($...