Preparation of large-scale ring carbon nanotube networks and a general growth mechanism for carbon nanotubes

Carbon nanotubes (CNTs) are currently considered a successor to silicon in future nanoelectronic devices. To realize this, controlled growth of defect-free nanotubes is required. Until now, the understanding of atomic-scale CNT growth mechanisms provided by molecular dynamics simulations has been hampered by their short timescales. Here, we develop an efficient and accurate machine learning force field, DeepCNT-22, to simulate the complete growth of defect-free single-walled ...

Graphene and carbon nanotubes (CNTs) share the same atomic structure of hexagonal carbon lattice. Yet, their synthesis differs in many aspects, including the shape and size of the catalyst. Here, we demonstrate a floating-catalyst chemical vapor deposition (FCCVD) technique for substrate-free, single-step growth of CNT-graphene heterostructures (CNT-G-H) using ethylene as a carbon source. The formation of CNT-G-H is directly evidenced by lattice-resolved (scanning) transmissi...

Double-walled carbon nanotubes (DWCNTs) combined the advantages of multi-walled (MW-) and single-walled (SW-) CNTs can be obtained by transforming the precursors (e.g. fullerene, ferrocene) into thin inner CNTs inside SWCNTs as templates. However, this method is limited since the DWCNT yield is strongly influenced by the filling efficiency (depending on the type of the filled molecules), opening and cutting the SWCNTs, and the diameter of the host SWCNTs. Therefore, it cannot...

Ever since the landmark discovery of single-walled carbon nanotubes (SWNTs) in 1993, they have been considered as ideal materials for any kind of application based on their outstanding properties (e.g. mechanical strength, thermal conductivity, ultra stability, etc.), and various techniques, including laser furnace technique, arc discharge technique, and recently, Catalytic Chemical Vapor Deposition (CCVD) technique, have been developed for the high-quality macroscopic genera...

We find that ferromagnetism can be induced in carbon nanotubes (CNTs) by introducing hydrogen. Multiwalled CNTs grown inside porous alumina templates contain a large density of defects resulting in significant hydrogen uptake when annealed at high temperatures. This hydrogen incorporation produces H-complex and adatom magnetism which generates a sizeable ferromagnetic moment and a Curie temperature near Tc=1000 K. We studied the conditions for the incorporation of hydrogen, t...

Chemical vapor deposition synthesis of single-walled carbon nanotubes experiments, using Fe catalyst, and alternating methane and carbon monoxide as carbon feedstocks, lead to the reversible formation of junctions between tubes of different diameters. Combined with an atomistic modeling of the tube / catalyst interface, this shows that the ratio of diameters of the tube and its seeding particle, denoting the growth mode, depends on the carbon fraction inside the catalyst. Wit...

Single-walled carbon nanotubes have been a candidate for outperforming silicon in ultrascaled transistors, but the realization of nanotube-based integrated circuits requires dense arrays of purely semiconducting species. Control over kinetics and thermodynamics in tube-catalyst systems plays a key role for direct growth of such nanotube arrays, and further progress requires the comprehensive understanding of seemingly contradictory reports on the growth kinetics. Here, we pro...

Carbon nanotube networks are one of the candidate materials to function as malleable, transparent, conducting films, with the technologically promising application of being used as flexible electronic displays. Nanotubes disorderly distributed in a film offers many possible paths for charge carriers to travel across the entire system, but the theoretical description of how this charge transport occurs is rather challenging for involving a combination of intrinsic nanotube pro...

A correlation is observed between the diameter (d) distribution of single walled carbon nanotubes and the percentages of metallic and semiconducting tubes in materials synthesized at low temperature (600 C) by plasma-assisted chemical vapor deposition. Small diameter nanotubes (average d~1.1 nm) show semiconducting-tube percentage much higher than expected for random chirality distribution. Density functional theory calculations reveal discernable differences in the cohesive ...

We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node, a current density of 5 10^8 A/cm^2 and a resistance of 7.8 kOhm could be achieved for a single multi-walled CNT vertical interconnect.