ID: cond-mat/0605437

The short-range correlations of a doped Mott insulator

May 18, 2006

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Charge dynamics in magnetically disordered Mott insulators

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Philip Bleicker, Dag-Björn Hering, Götz S. Uhrig
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With the aid of both a semi-analytical and a numerically exact method we investigate the charge dynamics in the vicinity of half-filling in the one- and two-dimensional $t$-$J$ model derived from a Fermi-Hubbard model in the limit of large interaction $U$ and hence small exchange coupling $J$. The spin degrees of freedom are taken to be disordered. So we consider the limit $0 < J \ll T \ll W$ where $W$ is the band width. We focus on evaluating the spectral density of a single...

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Pseudogap induced by short-range spin correlations in a doped Mott insulator

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B. Kyung, S. S. Kancharla, D. Sénéchal, A. -M. S. Tremblay, ... , Kotliar G.
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We study the evolution of a Mott-Hubbard insulator into a correlated metal upon doping in the two-dimensional Hubbard model using the Cellular Dynamical Mean Field Theory. Short-range spin correlations create two additional bands apart from the familiar Hubbard bands in the spectral function. Even a tiny doping into this insulator causes a jump of the Fermi energy to one of these additional bands and an immediate momentum dependent suppression of the spectral weight at this F...

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Pseudogaps in Underdoped Cuprates

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Patrick A. MIT Lee
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It has become clear in the past several years that the cuprates show many unusual properties, both in the normal and superconducting states, especially in the underdoped region. In particular, gap-like behavior is observed in magnetic properties, c-axis conductivity and photoemission, whereas in-plane transport properties are only slightly affected by the pseudogap. I shall argue that these experimental evidences must be viewed in the context of the physics of a doped Mott in...

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Doping dependence of charge dynamics in electron-doped cuprates

April 20, 2004

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Tianxing Ma, Huaiming Guo, Shiping Feng
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Within the t-t'-J model, the doping dependence of charge dynamics in electron-doped cuprates is studied. The conductivity spectrum shows a pseudogap structure with a low-energy peak appearing at $\omega\sim 0$ and an rather sharp midinfrared peak appearing around $\omega\sim 0.3\mid t\mid$, and the resistivity exhibits a crossover from the high temperature metallic-like to low temperature insulating-like behavior in the relatively low doped regime, and a metallic-like behavio...

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High temperature superconductivity was achieved by introducing holes in a parent compound consisting of copper oxide layers separated by spacer layers. It is possible to dope some of the parent compounds with electrons, and their physical properties are bearing some similarities but also significant differences from the hole doped counterparts. Here, we use a recently developed first principles method, to study the electron doped cuprates and elucidate the deep physical reaso...

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The analytical description of a doped Mott insulator

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Yu-Liang Liu
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With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation functions, and find that the separation of the spin and charge degrees of freedom of the electrons is an intrinsic character of the doped Mott insulator. For enough of large on-site repulsive Coulomb interaction, we show that the spectral weig...

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Not all doped Mott insulators have a pseudogap: key role of van Hove singularities

December 31, 2019

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Wei Wu, Mathias S. Scheurer, ... , Georges Antoine
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The Mott insulating phase of the parent compounds is frequently taken as starting point for the underdoped high-$T_c$ cuprate superconductors. In particular, the pseudogap state is often considered as deriving from the Mott insulator. In this work, we systematically investigate different weakly-doped Mott insulators on the square and triangular lattice to clarify the relationship between the pseudogap and Mottness. We show that doping a two-dimensional Mott insulator does not...

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Asymmetry of the electronic states in hole- and electron-doped cuprates: Exact diagonalization study of the t-t'-t''-J model

June 2, 2004

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T. Tohyama
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We systematically examine the asymmetry of the electronic states in the hole- and electron-doped cuprates by using the t-t'-t''-J model. Numerically exact diagonalization method is employed for a 20-site square lattice. We impose twisted boundary conditions (BC) instead of standard periodic BC. For static and dynamical correlation functions, averaging procedure over the twisted BC is used to reduce the finite-size effect. We find that antiferromagnetic spin correlation remain...

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Doping a Mott Insulator: Physics of High Temperature Superconductivity

October 18, 2004

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Patrick A. Lee, Naoto Nagaosa, Xiao-Gang Wen
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This article reviews the effort to understand the physics of high temperature superconductors from the point of view of doping a Mott insulator. The basic electronic structure of the cuprates is reviewed, emphasizing the physics of strong correlation and establishing the model of a doped Mott insulator as a starting point. A variety of experiments are discussed, focusing on the region of the phase diagram close to the Mott insulator (the underdoped region) where the behavior ...

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Nature of strong hole pairing in doped Mott antiferromagnets

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Zheng Zhu, Hong-Chen Jiang, ... , Weng Zheng-Yu
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Cooper pairing instability in a Fermi liquid is well understood by the BCS theory, but pairing mechanism for doped Mott insulators still remains elusive. Previously it has been shown by density matrix renormalization group (DMRG) method that a single doped hole is always self-localized due to the quantum destructive interference of the phase string signs hidden in the t-J ladders. Here we report a DMRG investigation of hole binding in the same model, where a novel pairing-glu...

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