Giant Intrinsic Spin and Orbital Hall Effects in Sr2MO4 (M=Ru,Rh,Mo)

We show theoretically that both intrinsic spin Hall effect (SHE) and orbital Hall effect (OHE) can arise in centrosymmetric systems through momentum-space orbital texture, which is ubiquitous even in centrosymmetric systems unlike spin texture. OHE occurs even without spin-orbit coupling (SOC) and is converted into SHE through SOC. The resulting spin Hall conductivity is large (comparable to that of Pt) but depends on the SOC strength in a nonmonotonic way. This mechanism is ...

We have investigated spin Hall effects in 4$d$ and 5$d$ transition metals, Nb, Ta, Mo, Pd and Pt, by incorporating the spin absorption method in the lateral spin valve structure; where large spin current preferably relaxes into the transition metals, exhibiting strong spin-orbit interactions. Thereby nonlocal spin valve measurements enable us to evaluate their spin Hall conductivities. The sign of the spin Hall conductivity changes systematically depending on the number of $d...

We investigate the intrinsic orbital Hall conductivity (OHC) and spin Hall conductivity (SHC) in a bismuth semimetal, by employing an sp-orbital tight-binding model. We report a notable difference between the anisotropy of OHC and SHC whose orbital and spin polarizations lie within the basal plane. We do not observe a substantial correlation between the orbital and spin Berry curvatures with spin-orbit coupling (SOC) at the Fermi energy, disproving the correlation between OHC...

Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite SrRuO3 has been predicted to have a pronounced Berry curvature. Through quantific...

It has been recently shown that monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase exhibit relatively large orbital Hall conductivity plateaus within their energy band gaps, where their spin Hall conductivities vanish. However, since the valley Hall effect (VHE) in these systems also generates a transverse flow of orbital angular momentum it becomes experimentally challenging to distinguish between the two effects in these materials. The VHE requ...

Accurate orthogonal tight-binding Hamiltonians are constructed for ferromagnetic SrRuO$_3$ and the layered perovskite superconductor, Sr$_2$RuO$_4$ by fitting to all-electron full-potential local density band structures obtained by the linearized augmented planewave method. These Hamiltonians allow the band structure to be computed on very fine meshes in the Brillouin zone at low cost, and additionally have analytic band velocities, while retaining the accuracy of the full-po...

An {\it ab initio} relativistic band structure calculation of spin Hall conductivity (SHC) ($\sigma_{xy}^z$) in Pd and Au metals has been performed. It is found that at low temperatures, intrinsic SHCs for Pd and Au are, respectively, $\sim 1400 (\hbar/e)(\Omega {\rm cm})^{-1}$ and $\sim 400 (\hbar/e)(\Omega {\rm cm})^{-1}$. The large SHC in Pd comes from the resonant contribution from the spin-orbit splitting of the doubly degenerated 4$d$ bands near the Fermi level at symme...

Intrinsic spin Hall conductivities are calculated for strong spin-orbit Bi$_{1-x}$Sb$_x$ semimetals, from the Kubo formula and using Berry curvatures evaluated throughout the Brillouin zone from a tight-binding Hamiltonian. Nearly-crossing bands with strong spin-orbit interaction generate giant spin Hall conductivities in these materials, ranging from 474 ($\hbar$/e)($\Omega$cm)$^{-1}$ for bismuth to 96 ($\hbar$/e)($\Omega$cm)$^{-1}$ for antimony; the value for bismuth is mor...

The spin Hall effect (SHE) is highly promising for spintronic applications, and the design of materials with large SHE can enable ultra-low power memory technology. Recently, 5d-transition metal oxides have been shown to demonstrate a large SHE. Here we report large values of SHE in four 5d-transition metal anti-perovskites which makes these anti-perovskites promising spintronic materials. We demonstrate that these effects originate in the mixing of dx2-y2 and dxy orbitals ca...

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect beyond the four band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors....