On the physical properties of memristive, memcapacitive, and meminductive systems

Memristive systems, namely resistive systems with memory, are attracting considerable attention due to their ubiquity in several phenomena and technological applications. Here, we show that even the simplest one-dimensional network formed by the most common memristive elements with voltage threshold bears non-trivial physical properties. In particular, by taking into account the single element variability we find i) dynamical acceleration and slowing down of the total resista...

A memristor is a two-terminal nanodevice that its properties attract a wide community of researchers from various domains such as physics, chemistry, electronics, computer and neuroscience.The simple structure for manufacturing, small scalability, nonvolatility and potential of using inlow power platforms are outstanding characteristics of this emerging nanodevice. In this report,we review a brief literature of memristor from mathematic model to the physical realization. Wedi...

Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative...

Memory circuit elements, namely memristive, memcapacitive and meminductive systems, are gaining considerable attention due to their ubiquity and use in diverse areas of science and technology. Their modeling within the most widely used environment, SPICE, is thus critical to make substantial progress in the design and analysis of complex circuits. Here, we present a collection of models of different memory circuit elements and provide a methodology for their accurate and reli...

The prediction made by L. O. Chua 45+ years ago (see: IEEE Trans. Circuit Theory (1971) 18:507-519 and also: Proc. IEEE (2012) 100:1920-1927) about the existence of a passive circuit element (called memristor) that links the charge and flux variables has been confirmed by the HP lab group in its report (see: Nature (2008) 453:80-83) on a successful construction of such an element. This sparked an enormous interest in mem-elements, analysis of their unusual dynamical propertie...

Under normal operations, memristive devices undergo variability in time and space and have internal dynamics. Interplay of memory and stochastic signal processing in memristive devices makes them candidates for performing bio-inspired tasks of information transduction and transformation, where intrinsic random behavior can be harnessed for high performance of circuits built up of individual memory storing elements. The paper discusses models of single memristive devices exhib...

We define a mechanical analog to the electrical basic circuit element M = d{\phi}/dQ, namely the ideal mechanical memristance M = dp/dx; p is momentum. We then introduce a mechanical memory resistor which has M(x) independent of velocity v, so it is a perfect (= not-just-memristive) memristor, although its memristance does not crucially involve inert mass. It is practically realizable with a 1cm radius hollow sphere in heavy fuel oil with a temperature gradient. It has a pinc...

This article presents a review on the main applications of the fourth fundamental circuit element, named "memristor", which had been proposed for the first time by Leon Chua and has recently been developed by a team at HP Laboratories led by Stanley Williams. In particular, after a brief analysis of memristor theory with a description of the first memristor, manufactured at HP Laboratories, we present its main applications in the circuit design and computer technology, togeth...

An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is $V(t)=R_M(q)I(t)$. It has been argued that a clear fingerprint of these ideal memristors is a pinched hysteresis loop in their I-V curves. However, a pinched I-V hysteresis loop is not a definitive test of whether a resistor with memory is truly a...

An analysis of the literature shows that there are two types of non-memristive models that have been widely used in the modeling of so-called "memristive" neural networks. Here, we demonstrate that such models have nothing in common with the concept of memristive elements: they describe either non-linear resistors or certain bi-state systems, which all are devices without memory. Therefore, the results presented in a significant number of publications are at least questionabl...