On the physical properties of memristive, memcapacitive, and meminductive systems

In his seminal paper, Chua presented a fundamental physical claim by introducing the memristor, "The missing circuit element". The memristor equations were originally supposed to represent a passive circuit element because, with active circuitry, arbitrary elements can be realized without limitations. Therefore, if the memristor equations do not guarantee that the circuit element can be realized by a passive system, the fundamental physics claim about the memristor as "missin...

It has been erroneously asserted by the circuit theorist Leon Chua that all zero-crossing pinched hysteresis curves define memristors. This claim has been used by Stan Williams of HPLabs to assert that all forms of RRAM and phase change memory are memristors. This paper demonstrates several examples of dynamic systems which fall outside of the constraints of memristive systems and yet also produce the same type of zero-crossing hysteresis curves claimed as a fingerprint for a...

Memristors are passive elements that allow us to store information using a single element per bit. However, this is not the only utility of the memristor. Considering the physical chemical structure of the element used, the memristor can function at the same time as memory and as a communication unit. This paper presents a new approach to the use of the memristor and develops the concept of resistive communication.

In this article, we introduce a new nanoscale electromechanical device -- a leaky memcapacitor -- and show that it may be useful for the hardware implementation of spiking neurons. The leaky memcapacitor is a movable-plate capacitor that becomes quite conductive when the plates come close to each other. The equivalent circuit of the leaky memcapacitor involves a memcapacitive and memristive system connected in parallel. In the leaky memcapacitor, the resistance and capacitanc...

In present day technology, storing and processing of information occur on physically distinct regions of space. Not only does this result in space limitations; it also translates into unwanted delays in retrieving and processing of relevant information. There is, however, a class of two-terminal passive circuit elements with memory, memristive, memcapacitive and meminductive systems -- collectively called memelements -- that perform both information processing and storing of ...

Adaptive response to a varying environment is a common feature of biological organisms. Reproducing such features in electronic systems and circuits is of great importance for a variety of applications. Here, we consider memory models inspired by an intriguing ability of slime molds to both memorize the period of temperature and humidity variations, and anticipate the next variations to come, when appropriately trained. Effective circuit models of such behavior are designed u...

We provide an introduction to a very specific toy model of memristive networks, for which an exact differential equation for the internal memory which contains the Kirchhoff laws is known. In particular, we highlight how the circuit topology enters the dynamics via an analysis of directed graph. We try to highlight in particular the connection between the asymptotic states of memristors and the Ising model, and the relation to the dynamics and statics of disordered systems.

Memristors, resistors with memory whose outputs depend on the history of their inputs, have been used with success in neuromorphic architectures, particularly as synapses and non-volatile memories. However, to the best of our knowledge, no model for a network in which both the synapses and the neurons are implemented using memristors has been proposed so far. In the present work we introduce models for single and multilayer perceptrons based exclusively on memristors. We adap...

While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems without hysteresis by the values of certain Fourier series coefficients. We als...

A generalized approach for the implementation of memristive two-terminal circuits with piesewise-smooth characteristics is proposed on the example of a multifunctional circuit based on a transistor switch. Two versions of the circuit are taken into consideration: an experimental model of the piecewise-smooth memristor (Chua's memristor) and a piecewise-smooth memristive capacitor. Physical experiments are combined with numerical modelling of the discussed circuit models. Thus...