September 23, 2002
The quantum transport properties of the ultrathin silver nanowires are investigated. For a perfect crystalline nanowire with four atoms per unit cell, three conduction channels are found, corresponding to three $s$ bands crossing the Fermi level. One conductance channel is disrupted by a single-atom defect, either adding or removing one atom. Quantum interference effect leads to oscillation of conductance versus the inter-defect distance. In the presence of multiple-atom defect, one conduction channel remains robust at Fermi level regardless the details of defect configuration. The histogram of conductance calculated for a finite nanowire (seven atoms per cross section) with a large number of random defect configurations agrees well with recent experiment.
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April 13, 2002
Metal nanowires exhibit a number of interesting properties: their electrical conductance is quantized, their shot-noise is suppressed by the Pauli principle, and they are remarkably strong and stable. We show that many of these properties can be understood quantitatively using a nanoscale generalization of the free-electron model. Possible technological applications of nanowires are also discussed.
January 10, 2002
We have analyzed the atomic arrangements and quantum conductance of silver nanowires generated by mechanical elongation. The surface properties of Ag induce unexpected structural properties, as for example, predominance of high aspect ratio rod-like wires. The structural behavior was used to understand the Ag quantum conductance data and the proposed correlation was confirmed by means of theoretical calculations. These results emphasize that the conductance of metal point con...
June 13, 2001
Experimental conductance histograms built from several thousand successive breakings of sodium nanowires exhibit peaks up to rather high conductance values (100 x 2e^2/h). In this paper, we present results from a disordered free-electron model of a metallic nanowire, which was previously successful in describing both conductance histograms and shot noise measurements in gold nanocontacts with much lower conductances. We find in particular that, with a modification of the mode...
December 28, 2007
We report quantum interference effects in InAs semiconductor nanowires strongly coupled to superconducting electrodes. In the normal state, universal conductance fluctuations are investigated as a function of magnetic field, temperature, bias and gate voltage. The results are found to be in good agreement with theoretical predictions for weakly disordered one-dimensional conductors. In the superconducting state, the fluctuation amplitude is enhanced by a factor up to ~ 1.6, w...
June 12, 2012
We have studied the effect of thermal effects on the structural and transport response of Ag atomic-size nanowires generated by mechanical elongation. Our study involves both time-resolved atomic resolution transmission electron microscopy imaging and quantum conductance measurement using an ultra-high-vacuum mechanically controllable break junction. We have observed drastic changes in conductance and structural properties of Ag nanowires generated at different temperatures (...
June 21, 2002
Gold nanowires generated by mechanical stretching have been shown to adopt only three kinds of configurations where their atomic arrangements adjust such that either the [100], [111] or [110] zone axes lie parallel to the elongation direction. We have analyzed the relationship between structural rearrangements and electronic transport behavior during the elongation of Au nanowires for each of the three possibilities. We have used two independent experiments to tackle this pro...
August 12, 2002
Using remarkably simple experimental techniques it is possible to gently break a metallic contact and thus form conducting nanowires. During the last stages of the pulling a neck-shaped wire connects the two electrodes, the diameter of which is reduced to single atom upon further stretching. For some metals it is even possible to form a chain of individual atoms in this fashion. Although the atomic structure of contacts can be quite complicated, as soon as the weakest point i...
April 23, 2008
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In this paper we review the theory of silicon nanowires. We focus on nanowires with diameters below 10 nm, where quantum effects become important and the properties diverge significantly from those of bulk silicon. These wires can be efficiently treated within electronic structure simulation methods and will be among the most important functional blocks of future nanoelectronic devices. Firstly, we review the structural properties of silicon nanowires, emphasizing the close c...