Quantum transport properties of ultrathin silver nanowires

We report low-temperature electrical transport studies of molecule-scale silicon nanowires. Individual nanowires exhibit well-defined Coulomb blockade oscillations characteristic of charge addition to a single nanostructure with length scales up to at least 400 nm. Further studies demonstrate coherent charge transport through discrete single particle quantum levels extending the whole device, and show that the ground state spin configuration follows the Lieb-Mattis theorem. I...

Even a single point defect in a quantum wire causes a conductance reduction. In this paper we prove (without any approximations) that for any point impurity this conductance reduction in all the sub-bands is exactly 2e^2/h. Moreover, it is shown that in the case of a surface defect, not only is the conductance minimum independent of the defect characteristics, but the transmission matrix also converges to universal (defect-independent) values. We also discuss particle confine...

We present detailed first-principles calculations of the electron-conduction properties of a three-sodium-atom nanowire suspended between semi-infinite crystalline Na(001) electrodes during its elongation. Our investigations reveal that the conductance is ~1 G0 before the nanowire breaks and only one channel with the characteristic of the $3s$ orbital of the center atom in the nanowire contributes to the electron conduction. Moreover, the channel fully opens around the Fermi ...

We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not well described by existing theory. The ability to continuously tune between these ...

We propose that the recently realized T-shaped semiconductor quantum wires (T-wires) could be exploited as three-terminal quantum interference devices. T-wires are formed by intersecting two quantum wells (QWs). By use of a scattering matrix approach and the Landauer-B\"uttiker theory, we calculate the conductance for ballistic transport in the parent QWs and across the wire region as a function of the injection energy. We show that different conductance profiles can be selec...

We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V indicating the formation of a single island in the entire nanowire channel. In ...

We present the results from an experimental study of the magneto-transport of superconducting wires of amorphous Indium-Oxide, having widths in the range 40 - 120 nm. We find that, below the superconducting transition temperature, the wires exhibit clear, reproducible, oscillations in their resistance as a function of magnetic field. The oscillations are reminiscent of those which underlie the operation of a superconducting quantum interference device.

Quantum interference has dramatic effects on electronic transport through nanotube contacts. In optimal configuration the intertube conductance can approach that of a perfect nanotube ($4e^2/h$). The maximum conductance increases rapidly with the contact length up to 10 nm, beyond which it exhibits long wavelength oscillations. This is attributed to the resonant cavity-like interference phenomena in the contact region. For two concentric nanotubes symmetry breaking reduces th...

In this paper the influence of adsorbed hydrogen on the behavior of gold nanojunctions is investigated. It is found, that the hydrogen environment has a strong effect on the conductance of atomic-sized gold junctions, which is markedly reflected by the growth of an additional peak in the conductance histogram at 0.5 quantum unit, 2e^2/h. The statistical analysis of the conductance traces implies that the new peak arises due to the hydrogen-assisted distortion of atomic gold c...

Quasi-one-dimensional superconductors or nanowires exhibit a transition into a nonsuperconducting regime, as their diameter shrinks. We present measurements on ultrashort nanowires (~40-190 nm long) in the vicinity of this quantum transition. Properties of all wires in the superconducting phase, even those close to the transition, can be explained in terms of thermally activated phase slips. The behavior of nanowires in the nonsuperconducting phase agrees with the theories of...