Optical Spin Orientation under Inter- and Intra-Subband Transitions in QWs

We report on the observation of optical activity of quantum wells resulting in the conversion of the light polarization state controlled by the light propagation direction. The polarization conversion is detected in reflection measurements. We show that a pure $s$-polarized light incident on a quantum well is reflected as an elliptically polarized wave. The signal is drastically enhanced in the vicinity of the light-hole exciton resonance. We show that the polarization conver...

We report on the observation of linear and circular magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures. We show that intraband (Drude-like) absorption of terahertz radiation in the heterostructures causes a dc electric current in the presence of an in-plane magnetic field. The photocurrent behavior upon variation of the magnetic field strength, temperature and wavelength is studied. We show that at moderate magnetic fields the photocurrent exhibits...

We show that optically excited electrons by a circularly polarized light in a semiconductor with spin-orbit coupling subject to a weak electric field will carry a Hall current transverse to the electric field. This light induced Hall effect is a result of quantum interference of the light and the electric field, and can be viewed as a physical consequence of the spin current induced by the electric field. The light induced Hall conductance is calculated for the p-type GaAs bu...

Thanks to the strong spin-orbit interaction (SOI), HgTe-based quantum wells (QWs) exhibit very rich spin-related properties. But the full descriptions of them are beyond the simple parabolic band models and conventional Rashba and Dresselhaus SOI terms, as a result of the strong interband coupling of the narrow gap band structures. Here, we develop a theoretical method to calculate the circular photogalvanic effect (CPGE) in Hg$_{0.3}$Cd$_{0.7}$Te/HgTe/Hg$_{0.3}$Cd$_{0.7}$Te ...

The equations-of-motion for the density matrix are derived in a multiband model to describe the response of semiconductors (bulk or quantum well structures) under optical excitation with arbitrary polarization. The multiband model used, comprising the twofold conduction band and the fourfold topmost valence band (or heavy- and light-hole states), incorporates spin-splitting of the single-particle states. The interaction terms include besides the direct Coulomb coupling betwee...

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin-polarization efficiencies and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct-gap photoluminescence exceeds the theoretical bulk limit, yielding ~37% and ~85% for transitions with heavy and light holes states, respectively...

In this paper we review both theoretical and experimental studies on spin-related photogalvanic effects. A short phenomenological introduction is followed by the discussion of the circular photogalvanic effect, the direct and inverse spin-galvanic effects and the trembling motion of spin-polarized electrons. Then we consider the pure spin currents and magneto-gyrotropic photocurrents. Finally, we discuss the spin-dependent photocurrents in topological insulators and Weyl semi...

We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of circularly polarized radiation is mainly controlled by the spin relaxation time of the holes. The saturation behavior has been determined for different QW widths and in a wide temperature range with the result that the saturation intensity sub...

The studies of spin phenomena in semiconductor low dimensional systems have grown into the rapidly developing area of the condensed matter physics: spintronics. The most urgent problems in this area, both fundamental and applied, are the creation of charge carrier spin polarization and its detection as well as electron spin control by nonmagnetic methods. Here we present a review of recent achievements in the studies of spin dynamics of electrons, holes and their complexes in...

Spin-sensitive saturation of absorption of infrared radiation has been investigated in p-type GaAs QWs. It is shown that the absorption saturation of circularly polarized radiation is mostly controlled by the spin relaxation time of the holes. The saturation behavior has been investigated for different QW widths and in dependence on the temperature with the result that the saturation intensity substantially decreases with narrowing of QWs. Spin relaxation times were experimen...