Dilute ferrimagnetic semiconductors in Fe-substituted spinel ZnGa$_2$O$_4$

Over the last two decades, the new branch of spintronics, i.e., semiconductor spintronics, has gained more attention because it integrates the characteristics of conventional semiconductors, such as optical bandgap and charge carriers, helpful for processing and computing pieces of information combined with magnets for data storage applications in a single device. Likewise, substituting transition metal (TM) ions to induce magnetic qualities into semiconductors or oxides crea...

We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in ...

Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magneto-transport such as anomalous Hall effect are examined from viewpoint of feasibili...

ZnCr2O4 undergoes a first order spin-Peierls-like phase transition at 12.5 K from a cubic spin liquid phase to a tetragonal Neel state. Using powder diffraction and single crystal polarized neutron scattering, we determined the complex spin structure of the Neel phase. This phase consisted of several magnetic domains with different characteristic wave vectors. This indicates that the tetragonal phase of ZnCr2O4 is very close to a critical point surrounded by many different Ne...

We report the synthesis and characterization of a bulk diluted magnetic semiconductor (La1-xBax)(Zn1-xMnx)AsO (0 <= x <= 0.2) with a layered crystal structure identical to that of the "1111" FeAs superconductors. No ferromagnetic order occurs for (Zn,Mn) substitution in the parent compound LaZnAsO without charge doping. Together with carrier doping via (La,Ba) sub- stitution, a small amount of Mn substituting for Zn results in ferromagnetic order with TC up to ~40 K, although...

Density functional calculations are used to study magnetic and electronic properties of the spinel ferrites, ZnFe$_2$O$_4$ and MnFe$_2$O$_4$. Correct magnetic orderings are obtained. ZnFe$_2$O$_4$ is predicted to be a small gap insulator in agreement with experiment. MnFe$_2$O$_4$ is found to be a low carrier density half-metal in the fully ordered state. However, strong effects on the electronic structure are found upon partial interchange of Fe and Mn atoms. This indicates ...

The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy investigations revealed that the conductive layers obtained at 180 and 200 C are epitaxial, do not contain any second-phase inclusions, but contain the Fe-enriched columnar regions of ove...

To realize room temperature ferromagnetic (FM) semiconductors is still a challenge in spintronics. Many antiferromagnetic (AFM) insulators and semiconductors with high Neel temperature $T_N$ are obtained in experiments, such as LaFeO$_3$, BiFeO$_3$, etc. High concentrations of magnetic impurities can be doped into these AFM materials, but AFM state with very tiny net magnetic moments was obtained in experiments, because the magnetic impurities were equally doped into the spin...

Compensated ferrimagnets, like antiferromagnets, show no net magnetization but their transport and magneto-optic properties resemble those of ferromagnets, thereby creating opportunities for applications in high-frequency spintronics and low-energy loss communications. Here we study the modification the noncollinear ferrimagnetic spin structure of Mn4N by a variety of metallic substitutions Z (Z = Cu - Ge and Ag - Sn) to achieve compensation at room temperature. The noncollin...

Following the theoretical predictions of ferromagnetism in Mn- and Co-doped ZnO, several workers reported ferromagnetism in thin films as well as in bulk samples of these materials. While some observe room-temperature ferromagnetism, others find magnetization at low temperatures. Some of the reports, however, cast considerable doubt on the magnetism of Mn- and Co-doped ZnO. In order to conclusively establish the properties of Mn- and Co-doped ZnO, samples with 6 percent and 2...