Dilute ferrimagnetic semiconductors in Fe-substituted spinel ZnGa$_2$O$_4$

Half-Heusler compounds with 18 valence electrons are semi-conducting. It will be shown that doping with electrons results in half-metallic ferromagnets, similar to the case of diluted semi-conductors. CoTiSb is known to be a semi-conducting Half-Heusler compound. Doping by Fe is expected to result in ferromagnetic order. It was found that Ti can be replaced by up to about 10% Fe while its crystal structure still remains C1b, which was proved by X-ray powder diffraction. SQUID...

Temperature dependent magnetization, muon spin rotation and $^{57}$Fe M\"ossbauer spectroscopy experiments performed on crystals of intermetallic FeGa$_{3-y}$Ge$_{y}$ ($y=0.11,0.14,0.17,0.22,0.27$, $0.29,0.32$) are reported. Whereas at $y=0.11$ even a sensitive magnetic microprobe such as $\mu$SR does not detect magnetism, all other samples display weak ferromagnetism with a magnetic moment of up to 0.22 $\mu_B$ per Fe atom. As a function of doping and of temperature a crosso...

The implementation and control of room temperature ferromagnetism (RTFM) by adding magnetic atoms to a semiconductor's lattice has been one of the most important problems in solid state state physics in the last decade. Herein we report for the first time, to our knowledge, on the mechanism that allows RTFM to be tuned by the inclusion of \emph{non-magnetic} aluminum in nickel ferrite. This material, NiFe$_{2-x}$Al$_x$O$_4$ (x=0, 0.5, 1.5), has already shown much promise for ...

We review pitfalls in recent efforts to make a conventional semiconductor, namely ZnO, ferromagnetic by means of doping with transition metal ions. Since the solubility of those elements is rather low, formation of secondary phases and the creation of defects upon low temperature processing can lead to unwanted magnetic effects. Among others, ion implantation is a method of doping, which is highly suited for the investigation of those effects. By focussing mainly on Fe, Co or...

Films of ZnO doped with magnetic ions, Mn and Co and, in some cases, with Al have been fabricated with a very wide range of carrier densities. Ferromagnetic behaviour is observed in both insulating and metallic films, but not when the carrier density is intermediate. Insulating films exhibit variable range hopping at low temperatures and are ferromagnetic at room temperature due to the interaction of the localised spins with static localised states. The magnetism is quenched ...

We report the discovery of a new diluted magnetic semiconductor, Li(Zn,Mn)P, in which charge and spin are introduced independently via lithium off-stoichiometry and the isovalent substitution of Mn2+ for Zn2+, respectively. Isostructural to (Ga,Mn)As, Li(Zn,Mn)P was found to be a p-type ferromagnetic semiconductor with excess Lithium providing charge doping. First principles calculations indicate that excess Li is favored to partially occupy the Zn site, leading to hole dopin...

The effects of substituting nonmagnetic Mg2+ and Zn2+ ions for the Mn2+ (S = 5/2) ions on the structural, magnetic and dielectric properties of the multiferroic frustrated antiferromagnet MnWO4 were investigated. Polycrystalline samples of Mn1-xMgxWO4 and Mn1-xZnxWO4 (0<x<0.3) solid solutions were prepared by a solid-state route and characterized via X-ray and neutron diffraction, magnetization, and dielectric permittivity measurements. Mg and Zn substitutions give rise to ve...

We investigate signatures of electronic correlations in the narrow-gap semiconductor FeGa$_3$ by means of electrical resistivity and thermodynamic measurements performed on single crystals of FeGa$_3$, Fe$_{1-x}$Mn$_x$Ga$_3$ and FeGa$_{3-y}$Zn$_y$, complemented by a study of the 4$d$ analog material RuGa$_3$. We find that the inclusion of sizable amounts of Mn and Zn dopants into FeGa$_3$ does not induce an insulator-to-metal transition. Our study indicates that both substitu...

The realization of semiconductors that are ferromagnetic above room temperature will potentially lead to a new generation of spintronic devices with revolutionary electrical and optical properties. Transition temperatures in doped ZnO are high but, particularly for Mn doping, the reported moments have been small. We show that by careful control of both oxygen deficiency and aluminium doping the ferromagnetic moments measured at room temperature in n-type ZnMnO and ZnCoO are c...

We present a systematic study of the magnetic properties of semiconducting ZnFe$_2$O$_4$ thin films fabricated by pulsed laser deposition at low and high oxygen partial pressure and annealed in oxygen and argon atmosphere, respectively. The magnetic response is enhanced by annealing the films at 250$^{\circ}$C and diminished at annealing temperatures above 300$^{\circ}$C. The initial increase is attributed to the formation of oxygen vacancies after argon treatment, evident by...