ID: cond-mat/0410678

Lande g factors and orbital momentum quenching in semiconductor quantum dots

October 26, 2004

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Strong enhancement of heavy-hole Land\'e factor $q$ in InGaAs symmetric quantum dots revealed by coherent optical spectroscopy

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We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to warping of valence band states. This warping dominates over the well-established mechanism associated with a reduced symmetry of quantum dots and the corresponding mixing of heavy-hole and light-hole states. The effect of band warping is manifested in a unique angular dependence of a trion photon echo signal on the direction of external magnet...

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Self-assembled InGaAs/GaAs quantum dots (QDs) are of particular importance for the deterministic generation of spin-photon entanglement. One promising scheme relies on the Larmor precession of a spin in a transverse magnetic field, which is governed by the in-plane $g$-factors of the electron and valence band heavy-hole. We probe the origin of heavy-hole $g$-factor anisotropy with respect to the in-plane magnetic field direction and uncover how it impacts the entanglement gen...

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Tunable effective g-factor in InAs nanowire quantum dots

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M. T. Björk, A. Fuhrer, A. E. Hansen, M. W. Larsson, ... , Samuelson L.
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We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown by chemical beam epitaxy. The values of the electron g-factors of the first few electrons entering the dot are found to strongly depend on dot size and range from close to the InAs bulk value in large dots |g^*|=13 down to |g^*|=2.3 for the smallest dots. These findi...

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Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quantum dot to qubit logic demonstrations. Here we present a measurement of the out-of-plane $g$-factor for single-hole quantum dots in this material. As this is a single-hole measurement, this is the first experimental result that avoids the strong orbital effects present in the out-of-plane configurati...

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We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitu...

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Photoinduced circular dichroism experiments in an oblique magnetic field allow measurements of Larmor precession frequencies, and so give a precise determination of the electron Lande g factor and its anisotropy in self-assembled InAs/GaAs quantum dots emitting at 1.32 eV. In good agreement with recent theoretical results, we measure g perp= 0.397 +_ 0.003 and g par = 0.18 +- 0.02.

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The electron, hole, and exciton g-factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g-factor and the amplitude of the those valence-state envelope functions which possess non-zero orbital momentum associated with the envelope function. The dependence of the exciton diamagnetic...

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The determination and control of the electron $g$-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the $g$-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the $g$-factor from the splitting of Kondo resonances and find that it varies continuou...

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The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit high-frequency g tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found in g tensor modulation resonance of the holes, due to the strong quadratic depen...

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We investigate the wave functions, spectrum, and g-factor anisotropy of low-energy electrons confined to self-assembled, pyramidal InAs quantum dots (QDs) subject to external magnetic and electric fields. We present the construction of trial wave functions for a pyramidal geometry with hard-wall confinement. We explicitly find the ground and first excited states and show the associated probability distributions and energies. Subsequently, we use these wave functions and 8-ban...

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