Lande g factors and orbital momentum quenching in semiconductor quantum dots

Emerging theoretical concepts for quantum technologies have driven a continuous search for structures where a quantum state, such as spin, can be manipulated efficiently. Central to many concepts is the ability to control a system by electric and magnetic fields, relying on strong spin-orbit interaction and a large g-factor. Here, we present a new mechanism for spin and orbital manipulation using small electric and magnetic fields. By hybridizing specific quantum dot states a...

g-factor tuning of electrons in quantum dots is studied as function of in-plane and perpendicular magnetic fields for different confinements. Rashba and Dresselhaus effects are considered, and comparison is made between wide- and narrow-gap materials. The interplay between magnetic fields and intrinsic spin-orbit coupling is analyzed, with two distinct phases found in the spectrum for GaAs in perpendicular field. The anisotropy of the g-factor is reported, and good agreement ...

Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal along its growth direction. We derive a contribution to the g-factor that stems from an orbital effect of the magnetic field, which lifts the Kramers degeneracy in the nanocrystal by altering the mixing between the heavy and the light...

We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based on 2DEG quantum dots, the g-factors of neighboring electron states show a surprisingly large fluctuation: g can scatter between 2 and 18. Furthermore electric gate tunability of the g-factor is demonstrated.

Recent experiments on Majorana fermions in semiconductor nanowires [Albrecht et al., Nat. 531, 206 (2016)] revealed a surprisingly large electronic Land\'e g-factor, several times larger than the bulk value - contrary to the expectation that confinement reduces the g-factor. Here we assess the role of orbital contributions to the electron g-factor in nanowires and quantum dots. We show that an LS coupling in higher subbands leads to an enhancement of the g-factor of an order ...

While electronic and spectroscopic properties of self-assembled In_{1-x}Ga_{x}As/GaAs dots depend on their shape, height and alloy compositions, these characteristics are often not known accurately from experiment. This creates a difficulty in comparing measured electronic and spectroscopic properties with calculated ones. Since simplified theoretical models (effective mass, k.p, parabolic models) do not fully convey the effects of shape, size and composition on the electroni...

We report significant deviations from the usual quadratic dependence of the ground state interband transition energy on applied electric fields in InAs/GaAs self-assembled quantum dots. In particular, we show that conventional second-order perturbation theory fails to correctly describe the Stark shift for electric field below $F = 10$ kV/cm in high dots. Eight-band ${\bf k}\cdot{\bf p}$ calculations demonstrate this effect is predominantly due to the three-dimensional strain...

We demonstrated the cancellation of the external magnetic field by the nuclear field at one edge of the nuclear polarization bistability in single InAlAs quantum dots. The cancellation for the electron Zeeman splitting gives the precise value of the hole g-factor. By combining with the exciton g-factor that is obtained from the Zeeman splitting for linearly polarized excitation, the magnitude and sign of the electron and hole g-factors in the growth direction are evaluated.

We show that in-plane-magnetic-field assisted spectroscopy allows extraction of the in-plane orientation and full 3D shape of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with sub-nm precision. The method is based on measuring orbital energies in a magnetic field with various strengths and orientations in the plane of the 2D electron gas. As a result, we deduce the microscopic quantum dot confinement potential landscape, and quantify the degre...

I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dots single particle and many body properties as a function of quantum dot-surrounding matrix valence band offset. I use an atomistic, empirical tight-binding approach and perform numerically demanding calculations for half-million atom nanosystems. I demonstrate that the overall confinement in quantum dots is a nontrivial interplay of two key factors: strain effects and the valence band offset. I s...