Deformation Electron-Phonon Coupling in Disordered Semiconductors and Nanostructures

The theory of Raman scattering by the electron--phonon coupled system in metals and heavily doped semiconductors is developed taking into account the Coulomb screening and the electron--phonon deformation interaction. The Boltzmann equation for carriers is applied. Phonon frequencies and optic coupling constants are renormalized due to interactions with carriers. The $k-$dependent semiclassical dielectric function is involved instead of the Lindhard-Mermin expression. The res...

What is the lowest temperature to which one can trace the growth of the dephasing time in low-dimensional conductors? I consider the fundamental limitation, the crossover from weak to strong localization, as well as several experimental reasons for frequently observed saturation of the dephasing time (hot-electron effects, dephasing by external noise). Recent progress in our understanding of the electron-phonon interaction in disordered conductors is also briefly discussed.

We provide a comprehensive theoretical framework to study how crystal dislocations influence the functional properties of materials, based on the idea of quantized dislocation, namely a "dislon". In contrast to previous work on dislons which focused on exotic phenomenology, here we focus on the theoretical structure and computational power. We first provide a pedagogical introduction of the necessity and benefits taking the dislon approach, that why the dislon Hamiltonian tak...

An atomistic method of calculating the spin-lattice relaxation times ($T_1$) is presented for donors in silicon nanostructures comprising of millions of atoms. The method takes into account the full band structure of silicon including the spin-orbit interaction. The electron-phonon Hamiltonian, and hence the deformation potential, is directly evaluated from the strain-dependent tight-binding Hamiltonian. The technique is applied to single donors and donor clusters in silicon,...

We consider an electron-acoustic phonon coupling mechanism associated with the dependence of crystal dielectric permittivity on the strain (the so-called Pekar mechanism) in nanostructures characterized by strong confining electric fields. The efficiency of Pekar coupling is a function of both the absolute value and the spatial distribution of the electric field. It is demonstrated that this mechanism exhibits a phonon wavevector dependence similar to that of piezoelectricity...

Electron-hole pairs in semiconductors are essential for solar cells and fast electronic circuitry, but the competition between carrier transport and relaxation into heat limits the efficiency and speed. Here we use ultrafast electron diffraction with terahertz pulse compression to measure the electron-phonon decay rate in single-crystal silicon as a function of laser excitation strength. We find that the excited electrons relax slower into phonons for higher carrier densities...

The first-principle theory of electron dephasing by disorder-induced two state fluctuators is developed. There exist two mechanisms of dephasing. First, dephasing occurs due to direct transitions between the defect levels caused by inelastic electron-defect scattering. The second mechanism is due to violation of the time reversal symmetry caused by time-dependent fluctuations of the scattering potential. These fluctuations originate from an interaction between the dynamic def...

We present a combined treatment of the non-equilibrium dynamics and transport of electrons and phonons by carrying out \textit{ab initio} calculations of the fully coupled electron and phonon Boltzmann transport equations. We find that the presence of mutual drag between the two carriers causes the thermopower to be enhanced and dominated by the transport of phonons, rather than electrons as in the traditional semiconductor picture. Drag also strongly boosts the intrinsic ele...

We study all of the leading-order contributions to spin relaxation of \textit{conduction} electrons in silicon due to the electron-phonon interaction. Using group theory, $k\cdot p$ perturbation method and rigid-ion model, we derive an extensive set of matrix element expressions for all of the important spin-flip transitions in the multi-valley conduction band. The scattering angle has an explicit dependence on the electron wavevectors, phonon polarization, valley position an...

Electron spin decoherence caused by elastic spin-phonon processes is investigated comprehensively in a zero-dimensional environment. Specifically, a theoretical treatment is developed for the processes associated with the fluctuations in the phonon potential as well as in the electron procession frequency through the spin-orbit and hyperfine interactions in the semiconductor quantum dots. The analysis identifies the conditions (magnetic field, temperature, etc.) in which the ...