January 13, 2005
Similar papers 5
November 24, 2021
Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demonstrated that electronic properties of silicon (Si)/germanium (Ge) superlattices...
February 20, 2017
In the present work, a theoretical study of electron-phonon (electron-ion) coupling rates in semiconductors driven out of equilibrium is performed. Transient change of optical coefficients reflects the band gap shrinkage in covalently bonded materials, and thus, the heating of atomic lattice. Utilizing this dependence, we test various models of electron-ion coupling. The simulation technique is based on tight-binding molecular dynamics. Our simulations with the dedicated hybr...
October 10, 2021
Scattering of carriers with ionized impurities governs charge transport in doped semiconductors. However, electron interactions with ionized impurities cannot be fully described with quantitative first-principles calculations, so their understanding relies primarily on simplified models. Here we show an ab initio approach to compute the interactions between electrons and ionized impurities or other charged defects. It includes the short- and long-range electron-defect (e-d) i...
July 28, 2020
The coherent quantum effect becomes increasingly important in the heat dissipation bottleneck of semiconductor nanoelectronics with the characteristic size shrinking down to few nano-meters scale nowadays. However, the quantum mechanical model remains elusive for anharmonic phonon-phonon scattering in extremely small nanostructures with broken translational symmetry. It is a long-term challenging task to correctly simulate quantum heat transport including anharmonic scatterin...
January 5, 2011
The paper reports on a study of electron-phonon interaction within a limited nanosized region. We invoked the modified Fr\"{o}hlich's Hamiltonian to calculate the electron self-energy, as well as the elastic and inelastic scattering cross sections. New effects have been revealed, more specifically: a bound state forms within the limited nanosized region, electrons undergo resonant elastic scattering, with strong inelastic scattering being possible from this state even at low ...
October 19, 2017
We study effects of strong impurities on the heat transfer in a coupled electron-phonon system in disordered graphene. A detailed analysis of the electron-phonon heat exchange assisted by such an impurity through the 'resonant supercollision' mechanism is presented. We further explore the local modification of heat transfer in a weakly disordered graphene due to a resonant scatterer and determine spatial profiles of the phonon and electron temperature around the scatterer und...
April 24, 2024
Thermal transport in crystals is influenced by chemistry, boundaries, and nanostructure. The phonon band structure extracted from molecular-dynamics simulations provides an illuminating view of both the type and extent of prevalence of wavelike mechanisms underlying the transport, yet falls short of elucidating the nature of thermal evolution for different phonon regimes. Here we present an analysis framework for the characterization of the entropic signature of the mechanism...
March 5, 2009
We study electron-phonon interaction induced decoherence between two-electron singlet and triplet states in a semiconductor double quantum dot using a spin-boson model. We investigate the onset and time evolution of this dephasing, and study its dependence on quantum dot parameters such as dot size and double dot separations, as well as the host materials (GaAs and Si). We find that electron-phonon interaction causes an initial Gaussian decay of the off-diagonal density matri...
September 21, 2005
This dissertation addresses two aspects of the theory and simulation of stress-diffusion coupling in semiconductors. The first part is a study of the role of kinetics in the formation of pits in stressed thin films. The second part describes how atomic-scale calculations can be used to extract the thermodynamic and elastic properties of point-defects. For both aspects, there exists an interaction between phenomena at the atomic and macroscopic scales and the formation of both...
January 15, 2020
Some basic radiative and non-radiative processes taking place in semiconductor nanocrystals are discussed, and rates of these processes are calculated. In particular, in the present review we explore both intra-crystallite processes, such as the photon emission, Auger recombination, phonon-assisted exciton relaxation, capture on surface defects, multi-exciton generation, and inter-crystallite processes realized through the exciton migration in ensembles of nanocrystals. Excit...