Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

The manuscript contains Comment to "Quantum Spin Hall Effect and Topological Phase Transitio in HGTe Quantum Wells" by B. Andrei Bernevig, Taylor L. Hughes and Shou-Cheng Zhang Science 314, 1757 (2006). The text proves that the quantum state, identified by these authors as the surface state located inside HgTe well is incorrect physically. The kinetic energy of the state is negative. The state cannot be identified as proper eigenfunction (vector) in the Hilbert space. Therefo...

The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of helical edge modes protected by time-reversal symmetry, has been demonstrated in HgTe-based quantum wells (QWs) with an inverted bandgap. We analyze the topological properties of a generically coupled HgTe-based double QW (DQW) and show how i...

We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantizat...

The quantum spin Hall (QSH) state is a topologically non-trivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel effect has been predicted and observed in HgTe quantum wells. In this work we predict a similar effect arising in Type-II semiconductor quantum wells made from InAs/GaSb/AlSb. Because of a rare band alignment the quantum well band structure ex...

We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At room temperature, we find electron and hole conduction that can be described by a c...

We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole-like subbands. Their crossing at critical magnetic field $B_c$ is a characteris...

Solid-state topological insulating phases, characterized by spin-momentum locked edge modes, provide a powerful route for spin and charge manipulation in electronic devices. We propose to control charge and spin transport in the helical edge modes by electrically switching the topological insulating phase in a HgTe/CdTe double quantum well device. We introduce the concept of a topological field-effect-transistor and analyze possible applications to a spin battery, which also ...

We study the spin-dependent transmission through interfaces between a HgTe/CdTe quantum well (QW) and a metal - both for the normal metal and the superconducting case. Interestingly, we discover a new type of spin Hall effect at these interfaces that happens to exist even in the absence of structure and bulk inversion asymmetry within each subsystem (i.e. the QW and the metal). Thus, this is a pure boundary spin Hall effect which can be directly related to the existence of ex...

Quantum wells formed by layers of HgTe between Hg$_{1-x}$Cd$_x$Te barriers lead to two-dimensional (2D) topological insulators, as predicted by the BHZ model. Here, we theoretically and experimentally investigate the characteristics of triple HgTe quantum wells. We describe such heterostructure with a three dimensional $8\times 8$ Kane model, and use its eigenstates to derive an effective 2D Hamiltonian for the system. From these we obtain a phase diagram as a function of the...

We outline here how strong light-matter interaction can be used to induce quantum phase transition between normal and topological phases in two-dimensional topological insulators. We consider the case of a HgTe quantum well, in which band inversion occurs above a critical value of the well thickness, and demonstrate that coupling between electron states and the $E$ field from an off-resonant linearly polarized laser provides a powerful tool to control topological transitions,...