ID: cond-mat/0611399

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

November 15, 2006

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Unexpected edge conduction in HgTe quantum wells under broken time reversal symmetry

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Eric Yue Ma, M. Reyes Calvo, Jing Wang, Biao Lian, Mathias Muhlbauer Christoph Brune, Yong-Tao Cui, Keji Lai, Worasom Kundhikanjana, Yongliang Yang, Matthias Baenninger, Markus Konig, Christopher Ames, Hartmut Buhmann, Philipp Leubner, Laurens W. Molenkamp, Shou-Cheng Zhang, David Goldhaber-Gordon, ... , Shen Zhi-Xun
Mesoscale and Nanoscale Phys...

The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs) is considered a milestone in the discovery of topological insulators. The QSH edge states are predicted to allow current to flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction of QSH theory that remains to be experimentally verified is the breakdown of the edge conduction under broken time reversal symmetry (TRS). Here we first establish a rigorous frame...

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Design principles for HgTe based topological insulator devices

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Parijat Sengupta, Tillmann Kubis, Yaohua Tan, ... , Klimeck Gerhard
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The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier(CdTe) and well-region(HgTe) are altered by replacing them with the alloy Cd$_{x}% $Hg$_{1-x}$Te of various stoichiometries, the critical width can be changed.The critical quantum well width is shown to depend on temperature, applied stress, grow...

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Anomalous Spin Response and Virtual-Carrier-Mediated Magnetism in a Topological Insulator

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T. Kernreiter, M. Governale, ... , Hankiewicz E. M.
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We present a comprehensive theoretical study of the static spin response in HgTe quantum wells, revealing distinctive behavior for the topologically nontrivial inverted structure. Most strikingly, the q=0 (long-wave-length) spin susceptibility of the undoped topological-insulator system is constant and equal to the value found for the gapless Dirac-like structure, whereas the same quantity shows the typical decrease with increasing band gap in the normal-insulator regime. We ...

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Evolutions of helical edge states in disordered HgTe/CdTe quantum wells

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Liang Chen, Qin Liu, Xulin Lin, ... , Jiang Xunya
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We study the evolutions of the nonmagnetic disorder-induced edge states with the disorder strength in the HgTe/CdTe quantum wells. From the supercell band structures and wave-functions, it is clearly shown that the conducting helical edge states, which are responsible for the reported quantized conductance plateau, appear above a critical disorder strength after a gap-closing phase transition. These edge states are then found to decline with the increase of disorder strength ...

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Magnetic field effects on edge and bulk states in topological insulators based on HgTe/CdHgTe quantum wells with strong natural interface inversion asymmetry

December 16, 2015

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M. V. Durnev, S. A. Tarasenko
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We present a theory of the electron structure and the Zeeman effect for the helical edge states emerging in two-dimensional topological insulators based on HgTe/HgCdTe quantum wells with strong natural interface inversion asymmetry. The interface inversion asymmetry, reflecting the real atomistic structure of the quantum well, drastically modifies both bulk and edge states. For the in-plane magnetic field, this asymmetry leads to a strong anisotropy of the edge-state effectiv...

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Electric field driven quantum phase transition between band insulator and topological insulator

November 4, 2009

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Jun Li, Kai Chang
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Other Condensed Matter

We demonstrate theoretically that electric field can drive a quantum phase transition between band insulator to topological insulator in CdTe/HgCdTe/CdTe quantum wells. The numerical results suggest that the electric field could be used as a switch to turn on or off the topological insulator phase, and temperature can affect significantly the phase diagram for different gate voltage and compositions. Our theoretical results provide us an efficient way to manipulate the quantu...

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Realistic picture of helical edge states in HgTe quantum wells

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S. S. Krishtopenko, F. Teppe
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We propose a minimal effective two-dimensional Hamiltonian for HgTe/CdHgTe quantum wells (QWs) describing the side maxima of the first valence subband. By using the Hamiltonian, we explore the picture of helical edge states in tensile and compressively strained HgTe QWs. We show that both dispersion and probability density of the edge states can differ significantly from those predicted by the Bernevig-Hughes-Zhang (BHZ) model. Our results pave the way towards further theoret...

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Spin polarized Charge Trapping and Transfer at a HgTe Topological Insulator Quantum Dot

July 20, 2016

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L. Z. Lin, Zhenhua Wu
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This work presents theoretical demonstration of a carrier trap unit formed by dual topological insulator constrictions (TIC) on the HgTe/CdTe quantum well (QW) with inverted band structures. The sample of HgTe/CdTe QW is patterned into a Hall bar device and a topological quantum dot is created by adding split gate electrodes closely on the QW. In sharp contrast to conventional semiconductor quantum dots, the presence or absence of topological edge states in the proposed quant...

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Emergent quantum Hall effects below $50$ mT in a two-dimensional topological insulator

March 31, 2020

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Saquib Shamim, Wouter Beugeling, Jan Böttcher, Pragya Shekhar, Andreas Budewitz, Philipp Leubner, Lukas Lunczer, Ewelina M. Hankiewicz, ... , Molenkamp Laurens W.
Mesoscale and Nanoscale Phys...

The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in HgTe quantum wells dilutely alloyed ...

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Quantum capacitance of an HgTe quantum well as an indicator of the topological phase

March 25, 2016

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T. Kernreiter, M. Governale, U. Zülicke
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Varying the quantum-well width in an HgTe/CdTe heterostructure allows to realize normal and inverted semiconducting band structures, making it a prototypical system to study two-dimensional (2D) topological-insulator behavior. We have calculated the zero-temperature thermodynamic density of states $D_\mathrm{T}$ for the electron-doped situation in both regimes, treating interactions within the Hartree-Fock approximation. A distinctively different behavior for the density depe...

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