ID: cond-mat/9806354

Gain Dependence of the Noise in the Single Electron Transistor

June 29, 1998

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An ultra sensitive radio frequency single electron transistor working up to 4.2 K

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Henrik Brenning, Sergey Kafanov, Tim Duty, ... , Delsing Per
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We present the fabrication and measurement of a radio frequency single electron transistor (rf-SET), that displays a very high charge sensitivity of 1.9 microlectrons/sqrt(Hz) at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0 microlectrons/sqrt(Hz) in the superconducting and normal state respectively. The sensitivity was measured as a function of radio frequency amplitude at three different temperatures: 40 mK, 1.8 K and 4.2 K.

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Noise in an SSET-resonator driven by an external field

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D. A. Rodrigues, G. J. Milburn
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We investigate the noise properties of a superconducting single electron transistor (SSET) coupled to an harmonically driven resonator. Using a Langevin equation approach, we calculate the frequency spectrum of the SSET charge and calculate its effect on the resonator field. We find that the heights of the peaks in the frequency spectra depend sensitively on the amplitude of the resonator oscillation and hence suggest that the heights of these peaks could act as a sensitive s...

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Anomalous Charge Noise in Superconducting Qubits

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B. G. Christensen, C. D. Wilen, A. Opremcak, J. Nelson, F. Schlenker, C. H. Zimonick, L. Faoro, L. B. Ioffe, Y. J. Rosen, J. L. DuBois, ... , McDermott R.
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We have used Ramsey tomography to characterize charge noise in a weakly charge-sensitive superconducting qubit. We find a charge noise that scales with frequency as $1/f^\alpha$ over 5 decades with $\alpha = 1.93$ and a magnitude $S_q(\text{1Hz})= 2.9\times10^{-4}~e^2/\text{Hz}$. The noise exponent and magnitude of the low-frequency noise are much larger than those seen in prior work on single electron transistors, yet are consistent with reports of frequency noise in other s...

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Quantum Noise, Effective Temperature, and Damping in a Superconducting Single-Electron Transistor

May 7, 2008

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W. W. Xue, Z. Ji, Feng Pan, ... , Rimberg A. J.
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We have directly measured the quantum noise of a superconducting single-electron transistor (S-SET) embedded in a microwave resonator consisting of a superconducting LC tank circuit. Using an effective bath description, we find that the S-SET provides damping of the resonator modes proportional to its differential conductance and has an effective temperature that depends strongly on the S-SET bias conditions. In the vicinity of a double Cooper pair resonance, when both resona...

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Theoretical analysis of the resistively-coupled single-electron transistor

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A. N. Korotkov
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The operation of resistively-coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperatures $T$ as small as $10^{-3} e^2/C$ (where $C$ is the junction capacitance) while the voltage gain becomes impossible at $T\agt 10^{-2}e^2/C$.

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Superconducting Single-Electron Transistor in a Locally Tunable Electromagnetic Environment: Dissipation and Charge Fluctuations

April 12, 2002

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W. Lu, K. D. Maranowski, A. J. Rimberg
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We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Within linear response, the S-SET conductance varies nonmonotonically with increasing 2DEG impedance. We find good agreement between our experimental results and a model incorporating electromagnetic fluctuations in both the S-SET leads and the 2DEG, ...

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Observing sub-microsecond telegraph noise with the radio frequency single electron transistor

September 22, 2004

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T. M. Buehler, D. J. Reilly, R. P. Starrett, V. C. Chan, A. R. Hamilton, ... , Clark R. G.
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Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to decoherence and loss of read out fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe micro-second teleg...

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Charge and current fluctuations in a superconducting single electron transistor near a Cooper pair resonance

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Mahn-Soo Choi, Francesco Plastina, Rosario Fazio
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We analyze charge tunneling statistics and current noise in a superconducting single-electron transistor in a regime where the Josephson-quasiparticle cycle is the dominant mechanism of transport. Due to the interplay between Coulomb blockade and Josephson coherence, the probability distribution for tunneling events strongly deviates from a Poissonian and displays a pronounced even--odd asymmetry in the number of transmitted charges. The interplay between charging and coheren...

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Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

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T. Ferrus, D. G. Hasko, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, ... , Briggs G. A. D.
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We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosphorous-doped single-electron transistor. A single-shot technique is successfully...

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A high sensitivity ultra-low temperature RF conductance and noise measurement setup

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François D. Parmentier, Adrien Mahé, Anne Denis, Jean-Marc Berroir, D. Christian Glattli, ... , Fève Gwendal
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We report on the realization of a high sensitivity RF noise measurement scheme to study small current fluctuations of mesoscopic systems at milliKelvin temperatures. The setup relies on the combination of an interferometric ampli- fication scheme and a quarter-wave impedance transformer, allowing the mea- surement of noise power spectral densities with GHz bandwith up to five orders of magnitude below the amplifier noise floor. We simultaneously measure the high frequency con...

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