Gain Dependence of the Noise in the Single Electron Transistor

By using the Schwinger-Keldysh approach, we evaluate the current noise and the charge noise of the single-electron transistor (SET) in the regime of large charge fluctuations caused by large tunneling conductance. Our result interpolates between previous theories; the "orthodox" theory and the "co-tunneling theory". We find that the life-time broadening effect suppresses the Fano factor below the value estimated by the previous theories. We also show that the large tunnel con...

We have analyzed numerically the response and noise-limited charge sensitivity of a radio-frequency single-electron transistor (RF-SET) in a non-superconducting state using the orthodox theory. In particular, we have studied the performance dependence on the quality factor Q of the tank circuit for Q both below and above the value corresponding to the impedance matching between the coaxial cable and SET.

We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent perturbations under the two-charged state approximation using the Schwinger-Kedysh approach combined with the generating functional technique. For a given generating functional, we derive exact expressions for tunneling currents and noises and...

We report on low-temperature noise measurements of a single electron transistor (SET) immersed in superfluid $^4$He. The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to the SET. In particular, we measure telegraph switching of the electric current through the device originating from a strongly coupled individual two-level fluctuator. By embedding the device in a superfluid helium immersion cell we are abl...

We calculate the full frequency spectral density of voltage fluctuations in a Single Electron Transistor (SET), used as an electrometer biased above the Coulomb threshold so that the current through the SET is carried by sequential tunnel events. We consider both a normal state SET and a superconducting SET. The whole spectrum from low frequency telegraph noise to quantum noise at frequencies comparable to the SET charging energy $(E_{C}/\hbar)$, and high frequency Nyquist no...

We have investigated the effects of quantum fluctuations of quasiparticles on the operation of superconducting radio-frequency single-electron transistors (RF-SETs) for large values of the quasiparticle cotunneling parameter $\alpha=8E_{J}/E_{c}$, where $E_{J}$ and $E_{c}$ are the Josephson and charging energies. We find that for $\alpha>1$, subgap RF-SET operation is still feasible despite quantum fluctuations that renormalize the SET charging energy and wash out quasipartic...

By using the drone-fermion representation and the Schwinger-Keldysh approach, we calculate the current noise and the charge noise for a single-electron transistor in the non-equilibrium state in the presence of large quantum fluctuation of island charge. Our result interpolates between those of the "orthodox theory" and the "co-tunneling theory". We find the following effects which are not treated by previous theories: (i) At zero temperature T=0 and at finite applied bias vo...

We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$\Omega$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conduct...

By configuring a radio-frequency single-electron transistor as a mixer, we demonstrate a unique implementation of this device, that achieves good charge sensitivity with large bandwidth about a tunable center frequency. In our implementation we achieve a measurement bandwidth of 16 MHz, with a tunable center frequency from 0 to 1.2 GHz, demonstrated with the transistor operating at 300 mK. Ultimately this device is limited in center frequency by the RC time of the transistor'...

Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged islands in the polysilicon gates.