October 9, 1998
Similar papers 5
December 6, 2007
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to advantages like less crystal defects and relatively simpler fabrication technology, that material may be of important value in future nanoelectronic device researches. In the order of vertical transport, lateral ...
December 6, 2007
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77K or 300K, and this is the first time that resonant tunneling is observed at room te...
October 26, 2017
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also ...
March 23, 1998
We apply low temperature confocal optical microscopy to spatially resolve, and spectroscopically study a single self assembled quantum dot. By comparing the emission spectra obtained at various excitation levels to a theoretical many body model, we show that: Single exciton radiative recombination is very weak. Sharp spectral lines are due to optical transitions between confined multiexcitonic states among which excitons thermalize within their lifetime. Once these few states...
June 6, 2007
We present a theory and experiment demonstrating optical readout of charge and spin in a single InAs/GaAs self-assembled quantum dot. By applying a magnetic field we create the filling factor 2 quantum Hall singlet phase of the charged exciton. Increasing or decreasing the magnetic field leads to electronic spin-flip transitions and increasing spin polarization. The increasing total spin of electrons appears as a manifold of closely spaced emission lines, while spin flips app...
July 12, 2007
We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry and (iii) piezoelectricity on the confined carriers and (iv) observe a peculiar charging sequen...
July 8, 2011
We calculate the emission spectrum of neutral and charged excitons in a pair of laterally coupled InGaAs quantum dots with nearly degenerate energy levels. As the interdot distance decreases, a number of changes take place in the emission spectrum which can be used as indications of molecular coupling. These signatures ensue from the stronger tunnel-coupling of trions as compared to that of neutral excitons.
May 10, 2022
We demonstrate scattering of laser light from two InAs quantum dots coupled to a photonic crystal waveguide, which is achieved by strain-tuning the optical transitions of the dots into mutual resonance. By performing measurements of the intensity and photon statistics of transmitted laser light before and after tuning the dots into resonance, we show that the nonlinearity is enhanced by collective scattering. In addition to providing a means of manipulating few-photon optical...
February 26, 2016
In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter and then combined with the quantum dot photons, giving rise to two-photon quantum ...
August 19, 2008
We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a clear Kondo effect was observed when strong coupling between the electrodes and the QDs was realized using a large QD with a diameter of ~ 100 nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperat...