Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy

High--quality single crystals of the heavy fermion superconductors CeCoIn$_5$ and CeIrIn$_5$ have been studied by means of low--temperature Scanning Tunneling Microscopy. Methods were established to facilitate \textit{in-situ} sample cleaving. Spectroscopy in CeCoIn$_5$ reveals a gap which persists to above $T_c$, possibly evidencing a precursor state to SC. Atomically resolved topographs show a rearrangement of the atoms at the crystal surface. This modification at the surfa...

We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of ...

The cleaved and (2 x 1) reconstructed (111) surface of p-type Si is investigated by scanning tunneling microscopy (STM). Single B acceptors are identified due to their characteristic voltage-dependent contrast which is explained by a local energetic shift of the electronic density of states caused by the Coulomb potential of the negatively charged acceptor. In addition, detailed analysis of the STM images shows that apparently one orbital is missing at the B site at sample vo...

Scanning tunneling microscopy (STM) is a fundamental tool for determination of the surface atomic structure. However, the interpretation of high resolution microscopy images is not straightforward. In this paper we provide a physical insight on how STM images can suggest atomic locations which are distinctively different from the real ones. This effect should be taken into account when interpreting high-resolution STM images obtained on surfaces with directional bonds. It is ...

The spatial distribution of the local density of states (LDOS) at Mn acceptors near the (110) surface of p-doped InAs is investigated by Scanning Tunneling Microscopy (STM). The shapes of the acceptor contrasts for different dopant depths under the surface are analyzed. Acceptors located within the first ten subsurface layers of the semiconductor show a lower symmetry than expected from theoretical predictions of the bulk acceptor wave function. They exhibit a (001) mirror as...

The results of ultra-high vacuum low-temperature scanning-tunneling microscopy (STM) and spectroscopy (STS) of atomically clean (111) surface of the topological insulator Bi$_2$Se$_3$ are presented. We observed several types of new subsurface defects whose location and charge correspond to p-type conduction of grown crystals. The sign of the thermoelectric effect also indicates p-type conduction. STM and STS measurements demonstrate that the chemical potential is always locat...

In this review we present recent theoretical results concerning investigations of single subsurface defects by means of a scanning tunneling microscope (STM). These investigations are based on the effect of quantum interference between the electron partial waves that are directly transmitted through the contact and the partial waves scattered by the defect. In particular, we have shown the possibility imaging the defect position below a metal surface by means of STM. Differen...

The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to address coherent electronic manipulation, on the dopants atomic scale properties. This requires both fine energetic and spatial resolution of the energy spectrum and wave-function, respectively. Here we present an experiment fulfilling both condi...

Scanning tunneling microscope (STM) has presented a revolutionary methodology to the nanoscience and nanotechnology. It enables imaging the topography of surfaces, mapping the distribution of electronic density of states, and manipulating individual atoms and molecules, all at the atomic resolution. In particular, the atom manipulation capability has evolved from fabricating individual nanostructures towards the scalable production of the atomic-sized devices bottom-up. The c...

We introduce a novel control mode for Scanning Tunneling Microscopy (STM) that leverages di/dz feedback. By superimposing a high-frequency sinusoidal modulation on the control signal, we extract the amplitude of the resulting tunneling current to obtain a di/dz measurement as the tip is scanned over the surface. A feedback control loop is then closed to maintain a constant di/dz, enhancing the sensitivity of the tip to subtle surface variations throughout a scan. This approac...