ID: physics/0008002

Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW

August 1, 2000

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Optoelectric spin injection in semiconductor heterostructures without ferromagnet

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A. G. Mal'shukov, K. A. Chao
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We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the $n$...

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Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells

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We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin-dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects in QWs based on asymmetry of photoexcitation and relaxation processes are propose...

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Magneto-gyrotropic photogalvanic effects due to inter-subband absorption in quantum wells

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We report on the observation of the magneto-photogalvanic effect (MPGE) due to inter-subband transitions in (001)-oriented GaAs quantum wells. This effect is related to the gyrotropic properties of the structures. It is shown that inter-subband absorption of linearly polarized radiation may lead to spin-related as well as spin independent photocurrents if an external magnetic field is applied in the plane of the quantum well. The experimental results are analyzed in terms of ...

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We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.

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Orbital photogalvanic effects in quantum-confined structures

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We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behavior upon variation of the radiation polarization state, wavelength, gate voltage and temperature is studied. We present the microscopical and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrat...

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Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures

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We report on the observation of linear and circular magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures. We show that intraband (Drude-like) absorption of terahertz radiation in the heterostructures causes a dc electric current in the presence of an in-plane magnetic field. The photocurrent behavior upon variation of the magnetic field strength, temperature and wavelength is studied. We show that at moderate magnetic fields the photocurrent exhibits...

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Spin dynamics and magnetic-field-induced polarization of excitons in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment

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T. S. Shamirzaev, J. Rautert, D. R. Yakovlev, J. Debus, A. Yu. Gornov, M. M. Glazov, ... , Bayer M.
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The exciton spin dynamics are investigated both experimentally and theoretically in two-monolayer-thick GaAs/AlAs quantum wells with an indirect band gap and a type-II band alignment. The magnetic-field-induced circular polarization of photoluminescence, $P_c$, is studied as function of the magnetic field strength and direction as well as sample temperature. The observed nonmonotonic behaviour of these functions is provided by the interplay of bright and dark exciton states c...

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Spin Splitting Induced Photogalvanic Effect in Quantum Wells

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L. E. Golub
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A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. The photocurrent excitation spectrum is shown to depend strongly on the form of the spin-orbit interaction. In the case of structure inversion asymmetry induced (Rashba) spin-splitting, the current is a linear function of light frequency near the absorption edge, and for the hig...

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Optical orientation of electron spins in GaAs quantum wells

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S. Pfalz, R. Winkler, T. Nowitzki, D. Reuter, A. D. Wieck, ... , Oestreich M.
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We present a detailed experimental and theoretical analysis of the optical orientation of electron spins in GaAs/AlAs quantum wells. Using time and polarization resolved photoluminescence excitation spectroscopy, the initial degree of electron spin polarization is measured as a function of excitation energy for a sequence of quantum wells with well widths between 63 Ang and 198 Ang. The experimental results are compared with an accurate theory of excitonic absorption taking f...

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Spin-dependent tunneling in semiconductor heterostructures with a magnetic layer

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Igor Rozhansky, Konstantin Denisov, ... , Lahderanta Erkki
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We present a theory that describes the appearance of circular polarization of the photoluminescence (PL) in ferromagnet-semiconductor hybrid heterostructures due to spin-dependent tunneling of photoexcited carriers from a quantum well into a magnetic layer. The theory succeeds in explaining the experimental data on time-resolved PL for heterostructures consisting of InGaAs-based quantum well (QW) and a spatially separated Mn $\delta$-layer. We show that the circular polarizat...

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