Gain Dependence of the Noise in the Single Electron Transistor

We theoretically investigate quantum fluctuation of charge between even and odd states of a normal-superconducting-normal single-electron tunneling transistor. It is shown that due to the superconducting gap, the charge fluctuation in the Coulomb blockade regime for even state is larger than that for odd state. We show that large energy correction in the former regime caused by charge fluctuation can be explained by considering the charging energy renormalization.

We analyze the noise properties of two single electron transistors (SETs) coupled via a shared voltage gate consisting of a nanomechanical resonator. Working in the regime where the resonator can be treated as a classical system, we find that the SETs act on the resonator like two independent heat baths. The coupling to the resonator generates positive correlations in the currents flowing through each of the SETs as well as between the two currents. In the regime where the dy...

Coupling between electronic and mechanical degrees of freedom in a single electron shuttle system can cause a mechanical instability leading to shuttle transport of electrons between external leads. We predict that the resulting low frequency current noise can be enhanced due to amplitude fluctuations of the shuttle oscillations. Moreover, at the onset of mechanical instability a pronounced peak in the low frequency noise is expected.

We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a direct measurement of the parallel conductance and no ad hoc assumptions on the symmetry of the transistors are necessary. Thus we can make a comparison between our data and theoretical predictions without any adjustable parameter. Even for ...

We performed noise measurements in a two-dimensional electron gas to investigate the nonequilibrium quantum Hall effect (QHE) state. While excess noise is perfectly suppressed around the zero-biased QHE state reflecting the dissipationless electron transport of the QHE state, considerable finite excess noise is observed in the breakdown regime of the QHE. The noise temperature deduced from the excess noise is found to be of the same order as the energy gap between the highest...

Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd'' quasiparticle in the island leads to a $2e$-periodic dependence of the current on the gate charge. We evaluate the $I-V$ characteristic in the framework of a model which accounts for these effects as well as for the influence of the electromagneti...

We have used a superconducting single-electron transistor as a DC-electrometer that is strongly coupled to the metal island of another transistor. With this set-up, it is possible to directly measure the charge distribution on this island. The strong capacitive coupling was achieved by a multilayer fabrication technique that allowed us to make the coupling capacitance bigger than the junction capacitances. Simulations of this system were done using orthodox theory of single-e...

We observed current-voltage characteristics of superconducting single charge transistors with on-chip resistors of R about R_Q = h/4e^2 = 6.45 kOhm, which are explained in terms of Cooper-pair cotunneling. Both the effective strength of Josephson coupling and the cotunneling current are modulated by the gate-induced charge on the transistor island. For increasing values of the resistance R we found the Cooper pair current at small transport voltages to be dramatically suppres...

We consider the possibility of using a micromechanical gate electrode located just above the island of a single-electron transistor to measure directly the fluctuating island charge due to tunnelling electrons.

We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10-100 larger than without the HBT at...