The breakdown flash of Silicon Avalance Photodiodes - backdoor for eavesdropper attacks?

We build and test a single-photon detector based on a Si avalanche photodiode Excelitas 30902SH thermoelectrically cooled to -100 deg. C. Our detector has dark count rate below 1 Hz, 500 um diameter photosensitive area, photon detection efficiency around 50%, afterpulsing less than 0.35%, and timing jitter under 1 ns. These characteristics make it suitable for long-distance free-space quantum communication links, which we briefly discuss. We also report an improved method tha...

We report the measurement of the photons flux produced in parametric down-conversion, performed in photon counting regime with actively quenched silicon avalanche photodiodes as single photon detectors. Measurements are done with the detector in a well defined geometrical and spectral situation. By comparison of the experimental data with the theory, a value for the second order susceptibilities of the non linear crystal can be inferred.

Single-photon detectors (SPDs) play important roles in highly sensitive detection applications, such as fluorescence spectroscopy, remote sensing and ranging, deep space optical communications, elementary particle detection, and quantum communications. However, the adverse conditions in space, such as the increased radiation flux and thermal vacuum, severely limit their noise performances, reliability, and lifetime. Herein, we present the first example of spaceborne, low-nois...

The ability to detect single photons has led to the advancement of numerous research fields. Although various types of single-photon detector have been developed, because of two main factors - that is, (1) the need for operating at cryogenic temperature and (2) the incompatibility with complementary metal-oxide-semiconductor (CMOS) fabrication processes - so far, to our knowledge, only Si-based single-photon avalanche diode (SPAD) has gained mainstream success and has been us...

We present an active quenching application specific integrated circuit (ASIC), for use in conjunction with InGaAs/InP avalanche photodiodes (APDs), for 1550 nm single-photon detection. To evaluate its performance, we first compare its operation with that of standard quenching electronics. We then test 4 InGaAs/InP APDs using the ASIC, operating both in the free-running and gated modes, to study more general behavior. We investigate not only the standard parameters under diffe...

It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite sensitivity and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection remains still unexplored. In this contribution, we are going to expose the different steps that we have taken in order to prove the efficiency of Geiger mode avalanche photodiodes in the aforementioned fi...

Single photon detection is important for a wide range of low-light applications, including quantum information processing, spectroscopy, and light detection and ranging (LiDAR). A key challenge in these applications has been to integrate single-photon detection capability into photonic circuits for the realization of complex photonic microsystems. Short-wavelength ($\lambda$ < 1.1 $\mu$m) integrated photonics platforms that use silicon (Si) as photodetectors offer the opportu...

Avalanche photodiode based single photon detectors, as crucial and practical components, are widely used in quantum key distribution (QKD) systems. For effective detection, most of these SPDs are operated in the gated mode, in which the gate is added to obtain high avalanche gain, and is removed to quench the avalanche. The avalanche transition region (ATR) is a certain existence in the process of adding and removing the gate. We first experimentally investigate the character...

In this work we investigate operation in the Geiger mode of the new single photon avalanche photo diode (SPAD) SAP500 manufactured by Laser Components. This SPAD is sensitive in the range 400-1000nm and has a conventional reach-through structure which ensures good quantum efficiency at the long end of the spectrum. By use of passive and active quenching schemes we investigate detection efficiency, timing jitter, dark counts, afterpulsing, gain and other important parameters a...

We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy $E_e$, and varies from $2.147 \pm 0.027$ ...